IEEE Circuits and Systems Magazine - Q2 2018 - 48

Feature

Exploring
the Dynamics
of Real-World
Memristors
on the Basis of
Circuit Theoretic
Model Predictions
a. ascoli, r. tetzlaff, and s. menzel

FOOtagE FIrm, Inc.

Abstract
the memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory
architectures and neuromorphic systems. However, resistance
switching memories offer a plethora of further opportunities for
the electronics of the future. By virtue of the compatibility between the well-established cmOs technology and the fabrication process of most memristors, the exploitation of the peculiar
dynamic behaviour of resistance switching memories, which, in
general, differ depending upon their material composition, may
allow the development of new circuits, which, processing information in unconventional forms, may extend and/or complement
the functionalities of state-of-the-art electronic systems. Further,
the attractive capability of real-world non-volatile memristors
to store and process information in the same physical nanoscale location open the fascinating opportunity to improve the
low throughput of Von neumann computing machines, due to
the limited bandwidth of the bus transferring data between the
Digital Object Identifier 10.1109/MCAS.2018.2821760
Date of publication: 21 May 2018

48

IEEE cIrcuIts and systEms magazInE

memory and the central processing unit. Finally, the extreme
sensitivity of their electrical behaviour to small changes in their
initial condition/input and the intrinsic stochastic variability in
their switching dynamics may be harnessed to develop innovative bio-signal sensors as well as new cryptographic circuits and
systems. the derivation of accurate mathematical models for
the electrical behaviour of real-world memristor nano-devices,
and their later circuit- and system-theoretic investigation aimed
at drawing a comprehensive picture of their peculiar nonlinear
dynamic behaviour under the set of inputs and initial conditions
expected of the application of interest are fundamental steps
towards their conscious future use in integrated circuit design.
With this in mind, the present paper adopts a powerful theoretic
tool known as Dynamic Route Map to analyse some of the most
reliable physics-based models of real-world resistance switching memories to reveal how a particular dynamic phenomenon,
known as fading memory, and recently discovered in a tantalum
oxide non-volatile memristor device fabricated at Hewlett Packard Labs, is ubiquitous at nanoscale. the physical mechanisms
behind the emergence of history-erase effects in non-volatile
memristor nano-devices is explained thoroughly for both the dc
and the ac periodic excitation scenarios.

1531-636X/18©2018IEEE

sEcOnd quartEr 2018



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