IEEE Microwave Magazine - May 2016 - 82

PA Design Basics
■ James Chu

T

he new textbook Introduction to
RF Power Amplifier Design and
Simulation by Abdullah Eroglu can be a resource for both working engineers and students: it fills an
existing gap in the area of RF power
amplifier design, serving as a complete guide and providing practical
methods and detailed examples of the
various design stages including analytical formulation and simulation.
Computer-aided design (CAD) tools to
verify the design are presented using
a step-by-step process, and most of the
equations are at the college algebra
level, making this book easy to follow.
The book's extensive coverage includes not only an introduction to the
design of several amplifier topologies
but also the design and simulation of an
amplifier's surrounding sections and
assemblies. In addition, unlike other
texts, the book focuses on the higherlevel design sections and assemblies
for RF amplifiers, helping designers
to accomplish the amplifier design
according to the given specifications. In
James Chu (jchu2@Kennesaw.edu), IEEE Senior
Life Member, is with Kennesaw
State University (formerly Southern Polytechnic
State University).
Digital Object Identifier 10.1109/MMM.2016.2526438
Date of publication: 7 April 2016

82

terms of active devices, the text focuses
on metal-oxide-semiconductor field
effect transistors (MOSFETs). Most of
the CAD programs are based on MATLAB and Ansoft Designer CPW. This
book focuses on the simulation side-

Introduction to RF Power Amplifier
Design and Simulation

by Abdullah Eroglu
© 2015 CRC Press
ISBN 978-1-4822-3164-9
449 pages, Hardcover US$118.96;
eBook US$97.97

it uses the Advanced Design System
and the OrCAD/PSpice environment,
including the PSpice device model.
Chapter 1, "Radio Frequency Amplifier Basics," covers the basics of linear
amplifier class A, B, and AB topologies
and nonlinear amplifier class C, D, E,
F, and S topologies. It also includes
brief discussions of an amplifier-chain
RF power calculation, 1-dB compression, efficiency, intermodulation, and
harmonic distortion. A list of MATLAB programs for the input signal to
the output spectrum is also presented.
Several tables summarize the performance of each amplifier class. A simulation of a diode switch circuit using
PSpice is also covered.
Chapter 2, "Radio Frequency Power
Transistors," introduces the major concepts related to and significant examples of RF power amplifier design. The
author also discusses the thermal characteristics of MOSFETs, including thermal calculation on transistor junction
temperature, and how the safe operation area for MOSFETs can be located.
Chapter 3, "Transistor Modeling
and Simulation," introduces MOSFET transistor modeling using network
parameters as a mathematical tool for the
designer to model and characterize the
critical parameters of devices. The twoport network matrix topology is used

May 2016



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