IEEE Solid-State Circuits Magazine - Winter 2018 - 42

■

FoM10*(Power/1 mW*Jitter/1 ps)

-250

/
wer )
(Po /10 M
g
o
y
l
0*
nc
= 1 que
220 ps*Fre
-
=
1FoM*Jitter/
W
1-m

-245
-240
-235
-230
-225

■

-220
-215

=
MT

-210

■

0

-20

Fo

-205
-200
10

20
2008
2014

40

80
160
Frequency (MHz)

2009
2015

2010
2016

2011
2017

2012
2018

320

640

■

2013

Figure 25: PLL and multiplying delay-clocked loop trends.

■

10.000

14,000

■

12,000

Area/bit (F2)

8,000
0.100
6,000
4,000

0.010

Bit Error Rate (%)

1.000

10,000

SrAM

2,000
0
2013

2014

2015

2016
Year

2017

2018

0.001
2019

Figure 26: Area/bit and bit-error-rate trends for PUFs.

generation in cryptographic applications.
Figure 26 illustrates trends in area/bit
scaling and bit-error rates for PUFs published at ISSCC from 2014 to 2018.

Memory
Subcommittee Chair: Leland Chang,
IBM, Yorktown Heights, New York
The demand for high-density, highbandwidth, and low-energy memory
systems continues in applications from
high-performance computing to SoCs
to wearables and the IoE. In embedded memory, record bit/cell-size static
random-access memory (SRAM) in both
7-nm and 10-nm high-array-density
SRAM have proved to be functional at the
megabyte level. Dynamic RAM (DRAM)

42

W I n t E r 2 0 18

■

a 0.031-μm2 and a 0.026-μm2 SRAM
bit cell in 10 nm and 7 nm, respectively, shown to be functional at a
megabyte array level
a 1-Mb 28-nm 1T1MTJ STTRAM array
with 3.6-ns read access time at 120 cC,
utilizing an offset-canceled sense amplifier and in situ write termination
a 16-Gb GDDR6 implemented to operate at 18 Gb/s/pin with a per-bittrainable single-ended DFE, ZQ-coded transmitter, and PLL-less clocking
a 16-Gb low-power DDR (LPDDR4X)
implemented in a 10-nm process
with 81-mm2 die size using in-DRAM
error-correcting code, which achieves
a data rate of 5 Gb/s/pin and self-refresh power of 0.1 mW/Gb
a 1-Tb NAND Flash memory in 64
stacked layers using 4-b/cell technology with 5.63-Gb/mm2 areal density
a 512-Gb 3-b/cell 3-D Flash memory on a 96-word-line-layer technology with a string-based start
bias-control scheme that achieves
7% shorter program time
multiple compute in memory implementations for neural networks
using SRAM and RRAM.

high-performance memory-interface
technologies are enhanced for GDDR6
and high-bandwidth memory (HBM);
meanwhile, record density DRAMs are
implemented in 1xnm processes.
NAND Flash memory has extended
capacity using both bit/cell techniques
and number of layers in 3-D structures.
A new era of compute-in-memory (CIM)
for neural networks is emerging using
both SRAM and resistive RAM (RRAM).
In the meantime, spin-transfer-torque
RAM (STTRAM) has progressed to operate at up to 120 ˚C with a one-transistor/one-magnetic-tunnel-junction
(1T1MTJ) implementation.
Some current state-of-the-art implementations from ISSCC 2018 include
the following:

IEEE SOLID-STATE CIRCUITS MAGAZINE

For embedded high-speed applications,
SRAM continues to be the memory of
choice-from mobile to high-performance servers to IoE and CIM for neural networks. This year, ISSCC 2018
highlights 7-nm FinFET bit cells operating at 6 GHz and a 10-nm SRAM
showing 23.6-Mb/mm2 array density.
SRAM arrays are also implemented for
product-sum computation in memory
operations. Figure 27 shows SRAM bit/
cell area and VMIN scaling trends.

High-Bandwidth DrAM
To maintain the optimal memory hierarchy ratio with respect to storage
memory, DRAM continues to scale density, form factor, and bandwidth. This
year, ISSCC 2018 presents the latest
interface-standard benchmarks, including GDDR6, HBM for high-bandwidth,
LPDDR4X for low-power applications,
and DDR4 for computing with high density. Figure 28 shows DRAM bandwidth
scaling over the past decade.



Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Winter 2018

Contents
IEEE Solid-State Circuits Magazine - Winter 2018 - Cover1
IEEE Solid-State Circuits Magazine - Winter 2018 - Cover2
IEEE Solid-State Circuits Magazine - Winter 2018 - Contents
IEEE Solid-State Circuits Magazine - Winter 2018 - 2
IEEE Solid-State Circuits Magazine - Winter 2018 - 3
IEEE Solid-State Circuits Magazine - Winter 2018 - 4
IEEE Solid-State Circuits Magazine - Winter 2018 - 5
IEEE Solid-State Circuits Magazine - Winter 2018 - 6
IEEE Solid-State Circuits Magazine - Winter 2018 - 7
IEEE Solid-State Circuits Magazine - Winter 2018 - 8
IEEE Solid-State Circuits Magazine - Winter 2018 - 9
IEEE Solid-State Circuits Magazine - Winter 2018 - 10
IEEE Solid-State Circuits Magazine - Winter 2018 - 11
IEEE Solid-State Circuits Magazine - Winter 2018 - 12
IEEE Solid-State Circuits Magazine - Winter 2018 - 13
IEEE Solid-State Circuits Magazine - Winter 2018 - 14
IEEE Solid-State Circuits Magazine - Winter 2018 - 15
IEEE Solid-State Circuits Magazine - Winter 2018 - 16
IEEE Solid-State Circuits Magazine - Winter 2018 - 17
IEEE Solid-State Circuits Magazine - Winter 2018 - 18
IEEE Solid-State Circuits Magazine - Winter 2018 - 19
IEEE Solid-State Circuits Magazine - Winter 2018 - 20
IEEE Solid-State Circuits Magazine - Winter 2018 - 21
IEEE Solid-State Circuits Magazine - Winter 2018 - 22
IEEE Solid-State Circuits Magazine - Winter 2018 - 23
IEEE Solid-State Circuits Magazine - Winter 2018 - 24
IEEE Solid-State Circuits Magazine - Winter 2018 - 25
IEEE Solid-State Circuits Magazine - Winter 2018 - 26
IEEE Solid-State Circuits Magazine - Winter 2018 - 27
IEEE Solid-State Circuits Magazine - Winter 2018 - 28
IEEE Solid-State Circuits Magazine - Winter 2018 - 29
IEEE Solid-State Circuits Magazine - Winter 2018 - 30
IEEE Solid-State Circuits Magazine - Winter 2018 - 31
IEEE Solid-State Circuits Magazine - Winter 2018 - 32
IEEE Solid-State Circuits Magazine - Winter 2018 - 33
IEEE Solid-State Circuits Magazine - Winter 2018 - 34
IEEE Solid-State Circuits Magazine - Winter 2018 - 35
IEEE Solid-State Circuits Magazine - Winter 2018 - 36
IEEE Solid-State Circuits Magazine - Winter 2018 - 37
IEEE Solid-State Circuits Magazine - Winter 2018 - 38
IEEE Solid-State Circuits Magazine - Winter 2018 - 39
IEEE Solid-State Circuits Magazine - Winter 2018 - 40
IEEE Solid-State Circuits Magazine - Winter 2018 - 41
IEEE Solid-State Circuits Magazine - Winter 2018 - 42
IEEE Solid-State Circuits Magazine - Winter 2018 - 43
IEEE Solid-State Circuits Magazine - Winter 2018 - 44
IEEE Solid-State Circuits Magazine - Winter 2018 - 45
IEEE Solid-State Circuits Magazine - Winter 2018 - 46
IEEE Solid-State Circuits Magazine - Winter 2018 - 47
IEEE Solid-State Circuits Magazine - Winter 2018 - 48
IEEE Solid-State Circuits Magazine - Winter 2018 - 49
IEEE Solid-State Circuits Magazine - Winter 2018 - 50
IEEE Solid-State Circuits Magazine - Winter 2018 - 51
IEEE Solid-State Circuits Magazine - Winter 2018 - 52
IEEE Solid-State Circuits Magazine - Winter 2018 - 53
IEEE Solid-State Circuits Magazine - Winter 2018 - 54
IEEE Solid-State Circuits Magazine - Winter 2018 - 55
IEEE Solid-State Circuits Magazine - Winter 2018 - 56
IEEE Solid-State Circuits Magazine - Winter 2018 - 57
IEEE Solid-State Circuits Magazine - Winter 2018 - 58
IEEE Solid-State Circuits Magazine - Winter 2018 - 59
IEEE Solid-State Circuits Magazine - Winter 2018 - 60
IEEE Solid-State Circuits Magazine - Winter 2018 - 61
IEEE Solid-State Circuits Magazine - Winter 2018 - 62
IEEE Solid-State Circuits Magazine - Winter 2018 - 63
IEEE Solid-State Circuits Magazine - Winter 2018 - 64
IEEE Solid-State Circuits Magazine - Winter 2018 - 65
IEEE Solid-State Circuits Magazine - Winter 2018 - 66
IEEE Solid-State Circuits Magazine - Winter 2018 - 67
IEEE Solid-State Circuits Magazine - Winter 2018 - 68
IEEE Solid-State Circuits Magazine - Winter 2018 - 69
IEEE Solid-State Circuits Magazine - Winter 2018 - 70
IEEE Solid-State Circuits Magazine - Winter 2018 - 71
IEEE Solid-State Circuits Magazine - Winter 2018 - 72
IEEE Solid-State Circuits Magazine - Winter 2018 - 73
IEEE Solid-State Circuits Magazine - Winter 2018 - 74
IEEE Solid-State Circuits Magazine - Winter 2018 - 75
IEEE Solid-State Circuits Magazine - Winter 2018 - 76
IEEE Solid-State Circuits Magazine - Winter 2018 - 77
IEEE Solid-State Circuits Magazine - Winter 2018 - 78
IEEE Solid-State Circuits Magazine - Winter 2018 - 79
IEEE Solid-State Circuits Magazine - Winter 2018 - 80
IEEE Solid-State Circuits Magazine - Winter 2018 - 81
IEEE Solid-State Circuits Magazine - Winter 2018 - 82
IEEE Solid-State Circuits Magazine - Winter 2018 - 83
IEEE Solid-State Circuits Magazine - Winter 2018 - 84
IEEE Solid-State Circuits Magazine - Winter 2018 - Cover3
IEEE Solid-State Circuits Magazine - Winter 2018 - Cover4
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2023
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2023
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2023
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2023
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2019
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2019
https://www.nxtbook.com/nxtbooks/ieee/mssc_2019summer
https://www.nxtbook.com/nxtbooks/ieee/mssc_2019winter
https://www.nxtbook.com/nxtbooks/ieee/mssc_2018fall
https://www.nxtbook.com/nxtbooks/ieee/mssc_2018summer
https://www.nxtbook.com/nxtbooks/ieee/mssc_2018spring
https://www.nxtbook.com/nxtbooks/ieee/mssc_2018winter
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_winter2017
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_fall2017
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_summer2017
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_spring2017
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_winter2016
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_fall2016
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_summer2016
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_spring2016
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_winter2015
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_fall2015
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_summer2015
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_spring2015
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_winter2014
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_fall2014
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_summer2014
https://www.nxtbook.com/nxtbooks/ieee/solidstatecircuits_spring2014
https://www.nxtbookmedia.com