IEEE Solid-States Circuits Magazine - Summer 2021 - 10

VDD
P
M1
35 µA
13 kΩ
R2
Q1
4×
A1
X -+
R1
Q2
64×
W
L
(a)
FIGURE 12: (a) The bandgap reference with R2
and R3 added and (b) the drain current of M2
=
50 µm
120 nm
M2
35 µA
Y
2 kΩ
R3
RL
13 kΩ
M3
Vout
5.5 kΩ
93.25
93.3
93.35
93.4
93.45
93.5
93.55
93.6
93.65
020406080
Temperature (°C)
(b)
versus T.
0.5
0.55
0.6
0.65
0.7
0.75
0.8
020406080
Temperature (°C)
tracking mechanism: If VDD
by TV ,DD so do VA
and VP
VY
Vout
V .DD
TT.
PA
varies
(Figure 8).
In essence, the OTA's PMOS active
load bootstraps P to
That VV can be seen by
noting that, in the absence of asymmetries
within the op amp, VV
ifVV .XY
PA
=
= This property is generally
considered a drawback of the fivetransistor
OTA, but it proves useful
here. Since the VDD
M ,b
perturbation is
and
100
directly applied to node P by Ma
the op amp provides only additional
correction.
The PSRR degradation at low tem100
FIGURE
13: The voltages at node Y and at the output of the bandgap circuit versus T.
peratures calls for a higher op amp
gain and, hence, a two-stage topology.
Figure 9 illustrates a simple
design wherein the output CM level
of the first stage is set by Ra
to be equal to one PMOS source-gate
voltage below .VDD
VDD
P
M1
M2
35 µA
X
13 kΩ
R2
Q1
4×
A1
-
+
R1
Q2
64×
W
L
=
FIGURE 14: The bandgap circuit with a regulated cascode.
10 SUMMER 2021
IEEE SOLID-STATE CIRCUITS MAGAZINE
50 µm
120 nm
35 µA
-
Y
+
2 kΩ
R3
Vout
13 kΩ
RL
5.5 kΩ
M4
according to (14).
Does the effect illustrated in Figure
8 exist in the two-stage op amp as
well? If VV
XY
TV ,DD
of Ma
. and VDD
then so do the drain voltages
and Mb
that the gate-source voltages of Mc
and Md
introducing little change at their
drains and, hence, in .VP
changes by
(Figure 10). We observe
remain relatively constant,
In other
A2
M3
N
and Rb
This method also
defines the bias currents of the second
stage by forming current mirrors.
Thus, the total supply current
is about 100 μA. This op amp offers
a gain of 380 at T 0C=
,
c
at
T 100C=
c
and 320
improving the PSRR
Voltage (V)
|ID2|(uA)

IEEE Solid-States Circuits Magazine - Summer 2021

Table of Contents for the Digital Edition of IEEE Solid-States Circuits Magazine - Summer 2021

Contents
IEEE Solid-States Circuits Magazine - Summer 2021 - Cover1
IEEE Solid-States Circuits Magazine - Summer 2021 - Cover2
IEEE Solid-States Circuits Magazine - Summer 2021 - Contents
IEEE Solid-States Circuits Magazine - Summer 2021 - 2
IEEE Solid-States Circuits Magazine - Summer 2021 - 3
IEEE Solid-States Circuits Magazine - Summer 2021 - 4
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