IEEE Power Electronics Magazine - December 2015 - 21

The conference kicked off with
the plenary session. The first speaker,
Don Tan, a distinguished engineer and
a senior staff manager at Northrop
Grumman Aerospace Systems and the
immediate past president of the IEEE
Power Electronics Society, took the
opportunity to talk about the resilient
dc microgrid for mission-critical space
applications. The talk focused on
structured microgrids, resiliency with
peak power tracking, built-in fault
management, and isolation and dead
bus recovery. He presented an advanced electrical power systems fully
regulated microgrid. This is arguably
the first full-featured resilient electrical power system for critical space
missions, and its many practices for
fault management can be directly leveraged for the development of dc or ac
microgrids. Microgrids provide a natural vehicle for effective renewables integration. Structured microgrids will
serve as an integral part of modern
grid that is fractal in nature.

David B. Durocher, the global
circuits from 1 to 30 kV. Besides highindustr y manager of Eaton and
lighting the system-level benefits of
president of the IEEE Industry AppliSiC power devices, Palmour's talk
cations Society (IAS),
focused on thirdhighlighted 50 years
generation (3G) SiC
of IAS's contributions
MOSFETs with ratThis year, the seventh
to power electronics.
ings from 900 V to
annual ECCE was
His talk, "A Look For15 kV. With a signifiward in Power Eleccant shrink in die
held in Montreal,
tronics Technologies
size, he hinted that
Quebec, Canada,
Following 50 Years
Cree's 3G SiC MOS20-24 September.
of History in IEEE's
FETs are setting a
Industry Applications
new standard for low
Society," celebrated
on-resistance power
the occasion by highlighting IAS's
devices. Meanwhile, the company is
accomplishments over the years and
also evaluating new DMOS structures
concluding that energy-efficient confor the fourth-generation SiC MOSversion solutions could translate into
FETs. On the IGBT front, Cree has
huge savings in dollars.
sampled 15-kV SiC IGBTs to research
and development (R&D) laboratories
and is in the process of developing
Advances in SiC Transistors
27.5-kV/20-A SiC IGBTs.
Next in line was Cree's chief technolAs Cree is a supplier of both SiC
ogy officer, John Palmour, who preMOSFETs and IGBTs, Palmour's plesented advances in silicon carbide
nary talk also focused on the crossover
(SiC) power devices and how they
range between these two transistors.
would change the dynamics of power

Department of Electrical and
Computer Engineering
McMaster University
1280 Main Street West, ITB-A110
Hamilton, Ontario, L8S 4K1
Canada

Faculty Position in Power Electronics at McMaster University
The Department of Electrical and Computer Engineering at McMaster University is seeking an
outstanding individual for a tenure-track or tenured position in Power Electronics. The appointment is
intended to be at the Assistant or Associate Professor level, but exceptional candidates at the Professor
level may also be considered. The successful applicant will have an earned PhD in a relevant discipline,
and the potential for excellence in both research and teaching. Consistent with McMaster's vision of
being a student-centred, research intensive university, the successful applicant will be expected to
develop a dynamic program of independent and collaborative research and demonstrate a strong
commitment to teaching, mentorship, and curriculum development at both the undergraduate and
graduate levels.
For full position details, please visit http://www.eng.mcmaster.ca/postings_fulltime.html
All qualified applicants are encouraged to apply, however, Canadian citizens and permanent residents will be given priority. McMaster University is strongly
committed to employment equity within its community and to recruiting a diverse faculty and staff. The University encourages applications from all qualified
candidates including women, persons with disabilities, First Nations, Metis and Inuit persons, members of racialized communities and LGBTQ-identified persons.

Innovation in Education ● Excellence in Research ● Quality of Student Life

December 2015

z IEEE PowEr ElEctronIcs MagazInE

http://www.eng.mcmaster.ca/postings_fulltime.html

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - December 2015