IEEE Power Electronics Magazine - December 2015 - 8

30MHz screened Rogowski probes
measure faster rise-times
The new CWT MiniHF is an AC current probe featuring:
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* Extended (-3dB) high frequency bandwidth
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* Peak dl/dt capability up to 100kA/µs
* Wide operating temperature from -40 to +125°C
* Thin 4.5mm Rogowski coil with 5kV peak insulation
* Zero insertion impedance

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described the world's first all-electric battery-powered
ferry with two electric motors offering 450-kW output
each. The batteries weigh 10 tons all together, with a
capacity of 150 kWh. Furthermore, he also presented
a four-zone 1,000-Vdc distribution system deployed in
the U.S. Navy's latest stealth-guided missile destroyer,
USS Zumwalt (DDG 1000). The system includes medium-voltage (MV) ac power generation and propulsion
with low-Vdc zonal electrical distribution. According
to the presentation, future combat-ready shipboard
power systems will be designed for reconfigurability
and survivability with the ability to isolate the damaged section and reconfigure the electric plant in fewer than 100 ms. The presentation further highlighted
the developments in SiC power devices and MV dc
distribution for future applications.

Day 2: New Power Devices and Integration

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IEEE PowEr ElEctronIcs MagazInE

z December 2015

The second day of the workshop started with discussions on new power devices and high-temperature
operation, chaired by Prof. H. Alan Mantooth, the
executive director of the National Science Foundation's Center for Grid-Connected Advanced Power
Electronics Systems, the University of Arkansas. Projecting the future of power devices beyond 2025, Prof.
Mantooth foresaw nanotechnology-enabled power
electronics. He called it "small is powerful" and cited a
few early examples-a nano IGBT with three times
more current and a nano CoolMOS with a fivefold
reduction in on-resistance. In the nano GaN area, Ireland's Tyndall National Institute is collaborating with
Queen's University Belfast and the Illinois Institute of
Technology, United States.
Similar projections were also made by Prof. T.
Paul Chow of Rensselaer Polytechnic Institute, Troy,
New York. Looking at wide-bandgap developments
worldwide by 2025, Prof. Chow presented a ten-year
road map for SiC and GaN devices. He envisioned SiC
MOSFETs handling up to 10 kV and a current rating as
high as 300 A as well as SiC IGBTs going up to a 25-kV
blocking voltage and a current rating of up to 300 A.
Likewise, SiC gate turn-off thyristor is also expected
to handle voltages as high as 25 kV and 300 A current.
In addition, GaN HEMT/MOSFET is projected to offer a voltage range of 30-6,500 V with a current rating
of up to 300 A. GaN power ICs are also expected to
emerge, as well as bidirectional power transistors in
silicon, GaN, and SiC technologies.
Fraunhofer Institute's Eckart Hoene predicted
issues for the heterogeneous integration of power
systems in a package. These include thermal performance with a higher number of substrate interconnections, soldering, package standardization, and
the availability of copper-metalized chips.
The challenges of system-level integration were
further discussed and debated in the session "Power

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Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - December 2015