IEEE Power Electronics Magazine - December 2021 - 53

Superior Performance
Temperature Rise Comparison
10
15
20
25
30
5
20
40
IGBT
superior price.
GaN
60 80 100
Output Power (KW)
120 140 160
FIG 7 Temperature rise comparison between GaN and IGBT.
Standard and Fast Recovery
High Voltage Diodes up to 45kV
Most diodes in stock.
Custom solutions at standard product prices.
Contact DTI today to discuss
your high voltage design.
FIG 8 All GaN Toyota vehicle and its traction inverter.
traction inverter, GaN improves efficiency by 20%, extending
mileage on one battery charge cycle.
Conclusion
The advantages of employing a GaN-based traction
inverter brings many benefits from extending mileage,
permitting lower temperature rise, and lowering system
cost. Lastly, GaN's tiny die size means much smaller
semiconductor area, giving way to future ultra-compact
package solutions, such as high integration double side
cooling package.
About the Author
Jimmy Liu is a technical marketing director at GaN Systems
Inc., Ottawa, Canada. He obtained his Master's and
Ph.D. degrees in power electronics from the South China
University of Technology, Guangzhou, China. He has more
than 20 years' experience in this field. Liu has deep expertise
in GaN and SiC device applications and renewable
energy system designs.
References
[1] Y. Nakayama, Y. Kanazawa, F. Kondo, M. Inoue, K. Ohta, S. Doki, and K.
Shiozaki, " Efficiency improvement of motor drive system by using a GaN
three phase inverter, " in Proc. 2019 IEEE Int. Conf. Ind. Technol. (ICIT),
pp. 1599-1604.
[2] J. (Lucas) Lu and P. Di Maso, " GaN enables efficient, cost-effective
800V EV traction inverters, " EDN, May 2020. https://www.edn.com/
gan-enables-efficient-cost-effective-800v-ev-traction-inverters/
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IEEE Power Electronics Magazine - December 2021

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - December 2021

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IEEE Power Electronics Magazine - December 2021 - Contents
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