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by B. Jayant Baliga
IgBt: the gE story
T
The IGBT has become
widely accepted as the power
device of choice for mediumEmitter
Emitter
Gate
and high-power applications
+
+
+
where the circuit operating
N
N
N
Gate
Gate P-Base
voltages exceed 200 V. It has
P-Base
P-Base
enabled the development of
highly efficient adjustable
N-Drift
N-Drift
N-Drift
speed motor drives for industrial applications, com+
+
+
pact fluorescent lamps for
P
P
P
lighting, and the electronic
(a)
(b)
(c)
ignition system for transportation. The benefits of this
fig 1 Cross sections of IGBT device structures: (a) the collector
technology to society have
V-MOS, (b) the collector D-MOS, and (c) the collector U-MOS.
been quantified in previous
publications [1], [2].
Cross
sections of the IGBT structhe
crucible
for
the
gestation
of
Digital Object Identifier 10.1109/MPEL.2015.2421753
ture
are
shown in Figure 1. They
IGBT
technology.
Date of publication: 24 June 2015
his article describes
the events that led to
the conception, development, and commercialization of the IGBT at the
General Electric (GE) Company. A unique set of circumstances consisting of
the diversity of GE product
divisions, a corporate edict
to maintain businesses leadership using innovations in
technology, and a visionary
management style from the
top of the company formed
16
IEEE PowEr ElEctronIcs MagazInE
Emitter
z June 2015
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