APEC Guides Engineers to Latest Advances in Power Devices, Components, and Packaging IMAGE LICENSED BY INGRAM PUBLISHING by Ashok Bindra High-voltage gallium nitride transistors and the new generation of digital controllers Digital Object Identifier 10.1109/MPEL.2015.2422271 Date of publication: 24 June 2015 48 IEEE POWER ELECTRONICS MAGAZINE June 2015 C ontinuing its long-standing tradition of addressing issues of immediate and long-term interest to practicing power electronics engineers, the IEEE Applied Power Electronics Conference and Exposition (APEC) celebrated its 30th anniversary this year in Charlotte, North Carolina, 15-19 March. While many advances and innovations in areas ranging from power semiconductor devices to circuit components and packaging were presented, two key trends took center stage: the availability of high-voltage gallium nitride (GaN) transistors with improved reliability, among other widebandgap devices, and the new generation of digital controllers for smooth transition from analog to digital power management in dc-dc and ac-dc power converters. In addition, the Power Sources Manufacturers Association (PSMA) presented its technology report on threedimensional (3-D) power packaging with a focus on embedded substrate technologies. 2329-9207/15©2015IEEE 2329-9207/15©2015IEEE