IEEE Power Electronics Magazine - June 2015 - 50

in Figure 3. It is encased in a 6-mm # 8-mm # 2-mm QFN
Based on initial device performance levels, the compapackage. Copackaging the eGaN FET half-bridge with the
ny's cascode devices will be used primarily in switch-mode
driver ensures minimized common-source inductance,
power supplies (SMPS) below 1 kW utilizing soft-switching
including other parasitic elements. This minimized inductechniques, while the enhancement-mode GaN transistors
tance has a significant performance impact on hardare targeting hard switching SMPS designs above 1 kW, priswitched topologies, said TI. Sampling now, the optimized
marily used in PFC and main dc-dc applications. A highGaN-based power stage LMG5200 supports power-converefficiency 2.5-kW totem-pole PFC using 600-V normally off
sion topologies with frequencies up to 5 MHz.
GaN transistors was demonstrated at APEC.
The easy-to-use 6-mm # 8-mm QFN package reBased on IR's cascode GaN transistors, Infineon demonquires no underfill, which significantly simplifies manstrated a 350-W LLC-based isolated dc-dc converter with
ufacturing. The reduced footprint solidifies the value
380-V input and 24-V output at 16 A. According to Infineon's
of GaN technology and will help increase adoption of
vice president of GaN Technology Device Engineering and
GaN power designs in many new applications, ranging
Product Development Tim McDonald, the GaN-based LLC
from new high-frequency wireless
converter operating at 1 MHz has
charging to 48-V telecom and indusdemonstrated a peak efficiency of
trial designs.
96.4% at room temperature (Figure 2).
The eighth brick board
Likewise, utilizing its fourthThe 135-mX, 600-V cascode GaN
is intended to
generation sub-100-V eGaN FETs
HEMTs used in this design are in the
in a hard-switched buck converter
final qualification stage for release to
showcase the high
circuit, EPC demonstrated a 500-W
the market, stated McDonald.
performance that can
isolated eighth brick with converCanada-based high-voltage GaN
sion efficiency as high as 96.7%. Feasupplier GaN Systems unveiled topbe achieved using
turing a full-bridge primary power
side cooling for its high-power eneGaN FETs, along with
stage comprising 60-V EPC2020
hancement-mode GaN (eGaN is a tradethe eGaN driver.
and 80-V EPC2021 eGaN FETs, the
mark of Efficient Power Conversion, a
500-W eighth brick EPC9115 prosupplier of GaN transistors) transistors
vides fully regulated 12-V output at
with current ratings from 8 to 250 A. As
42 A from an input voltage range of 48-60 V. According
a result, the supplier's high-power GaN transistors, housed in
to EPC, the eighth brick board is intended to showcase
its proprietary GaNPX package, can be cooled from the top
the high performance that can be achieved using eGaN
side using conventional printed circuit board techniques,
FETs, along with the eGaN driver. Concurrently, among
such as heatsinks and fans.
the number of emerging applications facilitated by eGaN
FETs, EPC identified a few that are in production mode.
Low-Voltage Offerings
These include wireless power solutions from Solace
On the low-voltage front, employing Efficient Power ConPower and envelope tracking from New Edge Signal Soversion's (EPC's) low-voltage eGaN FETs, Texas Instrulution. Solace Power has readied eGaN-based evaluation
ments (TI) unveiled an 80-V, 10-A integrated GaN-based
boards for a number of applications. One of them is wirehalf-bridge power stage, labeled LMG5200. It comprises an
less charging of drones, which is developed in partneroptimized high-frequency GaN FET driver and two 80-V,
ship with Boeing.
18-mX eGaN FETs in a half-bridge configuration, as shown

97.0%
96.5%

96.4%

LMG5200

Efficiency

96.0%
95.5%
95.0%

HI 4

94.5%
LI 5

1 VIN

HS
HI

LI
VCC

8 SW

LO
AGND
9 PGND

150

200

250

300

350

Pout (W)
FIG 2 Infineon's GaN-based 350-W LLC-based dc-dc converter
operating at 1 MHz offers a peak efficiency of 96.4% at room
temperature. (Graph courtesy of Infineon Technologies.)

HB
2

GaN Driver

94.0%
93.5%
93.0%
100

HS
3

IEEE PowEr ElEctronIcs MagazInE

z June 2015

6
VCC

7
AGND

FIG 3 This power stage copackages eGaN FETs in half-bridge configuration with the driver in a compact QFN package to minimized
parasitic inductance. (Figure courtesy of TI.)

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - June 2015