IEEE Power Electronics Magazine - June 2015 - 51
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reference design, which was developed in collaboration
with Xilinx and QDESYS. Based on the control intellectual
property from QDESYS, the field-programmable gate array
board provides the waveforms to control the motor. The
company said that it was characterizing the motor control
solution at high voltages.
Using its latest silicon carbide (SiC)-based power MOSFETs
and diodes, Cree, Inc., a multinational manufacturer of
semiconductor light-emitting diode materials and devices,
demonstrated a new reference design for an extremely lightweight (<25 kg), high-power-density 50-kW solar inverter,
flaunting 99% efficiency. According to Cree, a significant
reduction in power losses and higher switching frequency
Going Digital
have substantially reduced the size and weight of the solar
Targeting a broad range of ac-dc and dc-dc power convertinverter's cooling system, including its filtering components.
ers, Microchip Technology introduced its third-generation
Other SiC-based products exhibited included a light-emitdigital signal controller family dsPIC33EP GS with integratting diode power supply (<500 W), a zero-voltage switching
ed 70- million instructions per second digital signal proces(ZVS) resonant converter (<10 kW) for telecom, and a
sor (DSP) core, up to five 12-bit analog-to-digital converters
25-kW boost converter for solar applications.
(ADCs), Flash with live update, 12-bit digital-to-analog conSpeaking in the Industry Session "Latest Advances in
verters (DACs), and plenty of peripherals for digital power
Power Semiconductors: A Less-Biased Discussion," Ranmanagement, I2C interface with PMBus 1.2 support and onbir Singh, president and chief executive officer of GeneSiC
chip memory (Figure 4). As a result, the controller is
Semiconductor, highlighted the benefits of SiC power devicdesigned to implement more sophisticated nonlinear, prees over Si [1]. These include lower ondictive, and adaptive control algostate voltage (two to three times), fastrithms at higher frequencies, said Tom
er switching speeds (100-1,000 times),
Spohrer, product marketing manager
higher chip temperatures (250-300 °C
for Microchip's MCU16 division.
An output power of
versus 125 °C for Si), and lower leakDuring the presentation, Spohrer
1,500 W is achieved
age current. The result is that SiCshowed how the new controller, in
based power supplies offer higher
comparison with the current-generwithout forced-air
efficiency, a more compact solution,
ation controller, could improve the
cooling, and more
higher pulsed and continuous current
efficiency of a 100-W eighth brick by
densities, and higher-temperature op0.26%. In addition, the unit comes in a
than 3,000 W is
eration with higher current capability.
smaller 4 # 4 mm UQFN package, alachieved with
Thus, SiC offers significant reductions
lowing next-generation power supply
forced air.
in the size, cost, and weight of power
designs to achieve higher efficiency
systems, stated Singh. However, he
and more compact form factors,
cautioned that not all SiC device strucnoted Spohrer. Per marketing mantures are suitable for high-temperaager's presentation, the dsPIC33EP
ture operation and that GeneSiC's SiC junction transistors
GS family is supported by the supplier's MPLAB starter kit
(SJTs) and junction barrier Schottky rectifiers were optifor digital power, labeled DM330017-2. It enables users to
mized for superior high-temperature performance [2]. Reliexplore digital power conversion topologies in a variety
ability tests conducted with 1,200-V SJTs at 175 °C show that
of buck and boost dc-dc converters. Additionally, to help
the devices are robust and reliable at high temperatures. As
engineers calculate the optimum compensator coefficients
per Singh's paper, key emerging applications adopting SiC
required to maximize the performance of their designs, the
power devices include solar inverters with 1,000-1,500-Vdc
company is offering a new tool called digital compensator
bus architectures, data centers with 380-Vdc architectures,
design tool (DCDT). According to Spohrer, when combined
flyback circuits for compact bidirectional dc-dc converters,
with the company's compensator software libraries and
and electric vehicles based on 400-750-V motors.
royalty-free dsPIC33 reference designs, the DCDT makes
Meanwhile, GeneSiC continues to expand its product
digital power conversion designs easier than ever.
portfolio, which includes transistors and diodes with 1,200-
In the digital power modules arena, Ericsson Power Mod3,300-V ratings at 1-100-A current handling capabilities. Reules launched a 90-A dual-phase digital POL converter modcently, the company released new high-temperature SJTs
ule BMR465 with compliance to the new teraAMP standard
(240 mX) and Schottky diodes (up to 4 A) with a maximum
created by the Architects of Modern Power (AMP) Consorjunction temperature of 250 °C in metal can TO-46 packagtium, an alliance between CUI, Ericsson Power Modules,
es. While the high-temperature SJTs offered 300- and 100-V
and Murata. Offering compensation-free performance, the
blocking voltage capabilities, the Schottky diodes are rated
BMR465 POL modules can be easily paralleled to deliver up
for blocking voltages of 100, 300, and 600 V.
to 360 A to power advanced processor boards of the data
Utilizing its second-generation 1,200-V, 40-A SiC power
center networks. According to the maker, the advanced digiMOSFET SCH2080KE in a TO-247 package, ROHM Semital capabilities incorporated in the BMR465 make it ready
conductor exhibited a 10-kW three-level motor control
for future software-defined power architecture (SDPA)
June 2015
z IEEE PowEr ElEctronIcs MagazInE
51
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