IEEE Power Electronics Magazine - June 2018 - 35
1,000
SJ
100
Qg, nc
The FOM is a proxy for both the switching and conduction losses of a transistor operating in most switching power
supply applications. Figure 1 shows that the FOM of GaN
HEMTs is eight to 25 times lower than the SJ and SiC MOSFETs [1], mainly because the die sizes of the GaN HEMTs
are substantially smaller than those of the MOSFETs with
the same R DS_ON ratings. This means that the GaN HEMTs
are capable of switching at considerably higher frequencies
than both the SJ and SiC MOSFETs, potentially enabling
smaller and lighter power supplies [2].
One issue frequently overlooked is that while the raw
speed of the devices may be better, often, in power electronics, this simply moves a problem to another part of
the design. For example, gate drives circuits must be
redesigned to cope with much higher frequencies of operation, and the resulting electromagnetic capability behavior needs to be managed effectively. Therefore, it is important to note that the FOM is only one aspect of comparing
the ultimate performance of power electronics modules
and systems.
10
Ga
N
Th HEM
ey
are Ts a
rat re la
ed
t
at eral
60 de
0- vic
65
0 V es.
.
1
0.1
10
Examples of gan technology applied to Power
Electronics
An example of such an application is the totem pole bridgeless power factor correction circuit used in ac-dc power
supplies [6], [7]. The totem pole circuit is only feasible with
the GaN HEMTs that have Qrr . 0, as shown in Table 2.
100
Rds_on typ, mOhm
1,000
CoolMoS C7
ST MDmeshV
SiC 1,200-V Cree Gen 2
SiC 900-V Cree Gen 3
GaN Systems
CoolMoS C6
Panasonic
Navitas
SiC Trench Rohm
SiC 1,200-V Rohm
SiC 1,200-V STM
SiC JFET N-on Infineon
Using GaN Technology in Power
Electronics Applications
The comparison suggests that replacing, e.g., SJ MOSFETs
with GaN HEMTs, in a switching power supply would result
in noticeable performance improvements. However, most of
the early attempts [5] to demonstrate the value proposition
of GaN HEMTs by simply replacing incumbent MOSFETs
with GaN HEMTs have failed, either yielding incremental
performance improvements or sometimes causing performance degradation. The reason is that a GaN HEMT is not
necessarily a drop-in replacement for silicon (Si) or SiC
MOSFETs. Rather, it is a complex switching device, and its
parameters affecting the switching performance are quite
different than those found in MOSFETs (Table 1).
Therefore, to take full advantage of the intrinsic capabilities of the GaN HEMTs in switching power supply applications, it is necessary to use a holistic approach that combines the two major elements:
■■the identification of new topologies and applications
enabled by unique capabilities and performance attributes of the GaN HEMTs
■■the ecosystem required to enable broad acceptance of
the GaN HEMTs.
The first element encompasses roadmapping the socalled killer apps, the applications either entirely enabled
by the GaN HEMTs, or where the GaN HEMTs offer dramatic performance improvements compared to other technologies and materials.
1,2
0
FE 0-V
S
Ts
are iC an
ver d 6
tica 50l de V
vic
es.
FIG 1 The switching FOM of the publicly disclosed GaN HEMTs,
SiC, and Si SJ MOSFETs.
Other examples include switching power supply topologies employing bidirectional switches; high-efficiency power
converters [4]; full zero-voltage switching/zero-current
switching topologies to eliminate the source of electromagnetic interference (EMI) and take advantage of high-frequency capabilities of the GaN HEMTs [3]; and high-current,
high-frequency synchronous rectifiers [8], where both fullload and quiescent power losses are significantly reduced
due to very low Qg and the practically nonexistent Qrr of
the GaN HEMTs.
Future Applications of GaN Technology
in Power Electronics
The existing and emerging applications where the GaN
HEMTs offer dramatic performance improvements
include wireless power transfer systems, plasma generators, radio-frequency power supplies, and envelope-tracking converters. As GaN HEMTs get closer to their cost
and demonstrated reliability targets, more applications in
high-performance ac-dc networking and server power
supplies, photovoltaic inverters, electrical vehicles,
June 2018
z IEEE PowEr ElEctronIcs MagazInE
35
Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - June 2018
Contents
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