IEEE Power Electronics Magazine - June 2018 - 40

©istockphoto.com/sakkmesterke

IEEE Itrw working
group Position Paper-
system Integration and
application: silicon carbide
A roadmap for silicon carbide adoption
in power conversion applications

by Jin Wang, Victor Veliadis,
Jon Zhang, Yazan Alsmadi,
Peter R. Wilson,
and Mark J. Scott

Digital Object Identifier 10.1109/MPEL.2018.2822863
Date of publication: 14 June 2018

40

IEEE PowEr ElEctronIcs MagazInE

z	June 2018

A

long-term vision of the power electronics community is to
develop highly integrated power electronic converters that
are specialized for their particular applications. The motivation for a migration from silicon (Si) to silicon carbide
(SiC) power electronics is driven by the need for those
power converters to have much greater power density, reliability, and
overall system performance without costly devices or designs. The benefit of moving to SiC is that, for power electronics, it is inevitable that
there will be a rapid transition from Si to SiC technology.
The Silicon Carbide Application Working Group (SiC-AWG) of the
International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) comprises the following four subgroups: utility,
transportation, power supplies and drives, and medical and emerging
2329-9207/18©2018IEEE



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Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - June 2018

Contents
IEEE Power Electronics Magazine - June 2018 - Cover1
IEEE Power Electronics Magazine - June 2018 - Cover2
IEEE Power Electronics Magazine - June 2018 - Contents
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IEEE Power Electronics Magazine - June 2018 - Cover3
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