IEEE Power Electronics Magazine - June 2018 - 48

Table 1. Key device metrics for benchmarking power devices [2].
Concept

silicon

sic

gan

Super junction

Planar MOSFET

eMode HEMT

600 V

900 V

Blocking voltage
On-state resistance

56 mΩ

65 mΩ

6,000 nC

130 nC

Energy stored in Coss at 400 V

8.1 µJ

8.8 µJ

Charge stored in Coss at 400 V

420 nC

73 nC

15 µJ

10 µJ

Reverse recovery charge

Turn-off loss at 10 A/400 V

cost per amp, efficiency, frequency, and power density will
be the basis for charting a roadmap with short-, medium-,
and long-term projections for GaN power devices.
The L-GaN-MDWG will address various specific topics, including
■■possible lateral GaN power device configurations
■■gate drives
■■packaging
■■wafer size
■■defect density
■■electric field management
■■reliability targets and qualification methods
■■device robustness (i.e., short circuit, unclamped inductive switching, electrostatic discharge, and so on)
■■cost per unit area for the various voltage nodes.
These topics will be addressed in 2018 by forming a leadership team, including a team chair and two cochairs (already
complete); recruiting a team of experts from the field representing industry, academia, national laboratories, and government agencies; proposing a meeting structure and initiating working group meetings, including teleconferences and
face-to-face meetings at the major conferences [e.g., IEEE
Applied Power Electronics Conference (APEC), IEEE International Symposium on Power Semiconductor Devices and
Integrated Circuits, IEEE Workshop on Wide-Bandgap
Power Devices and Applications, IEEE International Electron Devices Meeting, IEEE International Reliability Physics
Symposium, and so on]; sending out a questionnaire; receiving feedback from the questionnaire; and completing the initial roadmap document.

The Path Forward
The team convened in March at APEC 2018 to present its
strategy for defining the SiC and GaN power device roadmaps. In the following months, the topic cochairs will
assemble teams and collect data to populate the templates for their applications. Later in 2018, the team will
evaluate the findings and begin to develop the roadmap.
It will summarize the data gathered from the template
and provide supporting tables and graphs to corroborate
the findings. The goal for 2018 is to complete the initial
survey task, formulate a preliminary roadmap, and pres-

IEEE PowEr ElEctronIcs MagazInE

z June 2018

ent the findings at an international conference late in the year.

About the Authors

Victor Veliadis (jvveliad@ncsu.edu) received
his B.S. degree from the National Technical
55 mΩ
University of Athens, Greece, in 1990 and
0 nC
his M.S. and Ph.D. degrees from Johns Hop6.4 µJ
kins University, Baltimore, Maryland, in 1992
40 nC
and 1995, respectively. He is the deputy executive director and chief technology officer
10 µJ
for PowerAmerica Institute, Raleigh, North
Carolina. He is also a professor of electrical and
computer engineering at North Carolina State
University, and an IEEE Fellow and Distinguished Lecturer.
Robert Kaplar (rjkapla@sandia.gov) received his B.S.
degree in physics from Case Western Reserve University,
Cleveland, Ohio, in 1994 and his M.S. and Ph.D. degrees in
electrical engineering from The Ohio State University,
Columbus, in 1998 and 2002, respectively. Since 2002, he
has been at Sandia National Laboratories, Albuquerque,
New Mexico, where he is currently the manager of semiconductor material and device sciences.
Jon Zhang (qzhang@ncsu.edu) received his B.S. and
M.S. degrees from Tsinghua University, Beijing, China, in
1992 and 1997, respectively, and his Ph.D. degree from the
University of South Carolina, Columbia, in 2001. He is the
director of power device technology for PowerAmerica
Institute, Raleigh, North Carolina.
Mietek Bakowski (mietek.bakowski@ri.se) received
his M.Sc. degree in electronics from the Warsaw University
of Technology, Poland, in 1969 and his Ph.D. degree in electron physics from the Chalmers University of Technology,
Gothenburg, Sweden, in 1974. He received his assistant professor competence in 1981 and is currently the senior expert
and manager of the Wide-Bandgap Power Center at Acreo.
Sameh Khalil (sameh.khalil@infineon.com) received
his B.Sc. degree in electrophysics from Alexandria University, Egypt, in 1989 and his M.A.Sc. and Ph.D. degrees in electrical and computer engineering from the University of
Toronto, Canada, in 1999 and 2003, respectively. He is a lead
principal engineer for GaN device reliability and product
engineering management at Infineon Technologies, Neubiberg, Germany.
Peter Moens (peter.moens@onsemi.com) received his
M.S. and Ph.D. degrees in solid-state physics from the University of Ghent, Belgium, in 1990 and 1993, respectively. He
is a principal member of the technical staff in corporate
research and development for ON Semiconductor, Belgium.
600 V

References
[1] Yole Devéloppement. (2016). Annual Market Report. [Online]. Available:
http://www.yole.fr
[2] G. Deboy, M. Treu, O. Haeberlen, and A. Neumayr, "Si, SiC, and GaN
power devices: An un-biased view on key performance indicators," in Proc.
IEEE Int. Electron Devices Meeting, 2016, pp. 20.2.1-20.2.4.

http://www.yole.fr

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