IEEE Power Electronics Magazine - June 2019 - 36
by Alberto O. Adan, Daisuke Tanaka,
Lajos (Louis) Burgyan, and Yuji Kakizaki
T
here is continuous activity to increase the
efficiency and reduce the size of power electronic systems and modules developed for
transportation and automotive electrification
applications [1], [2]. One of the key requirements for achieving these objectives is to operate semiconductor devices at higher power density and junction
temperature (Tjmax), while maintaining high reliability.
The emergence of wideband-gap (WBG) semiconductors
[silicon carbide (SiC) and gallium nitride (GaN)] [9] and
new high-temperature die-attach methods, interconnects, and packaging materials [9] enables power-device
manufacturers to increase Tjmax from Tj = 150 °C to Tj =
175 °C and, further, to Tj = 200 °C [3]-[10].
Emerging markets for SiC and GaN power semiconductors are driven by demand from hybrid and electric vehicles, power supplies, and photovoltaic inverters and are
expected to reach US$1 billion by 2020 [1]. SiC transistors
Digital Object Identifier 10.1109/MPEL.2019.2909592
Date of publication: 18 June 2019
36
IEEE POWER ELECTRONICS MAGAZINE
z June 2019
©ISTOCKPHOTO.COM/SANDIPKUMAR PATEL
The Current Status
and Trends of
1,200-V Commercial
Silicon-Carbide
MOSFETs
Deep physical analysis of
power transistors from a
designer's perspective
were commercially introduced in 2010 and have evolved
to become a mainstream technology for power electronics. Several leading manufacturers introduced advanced
3G process technologies in 2016 and 2017, and those offerings now facilitate alternate sourcing and cost/price
reductions. These technologies are gradually becoming
a viable replacement for Si-based IGBTs in applications
exceeding 1,000 V.
This article examines state-of-the-art, mass-produced,
1,200 V-rated SiC power transistors from leading manufacturers [including STMicroelectronics (France-Italy), ROHM
(Japan), Wolfspeed (United States, formerly CREE Inc.),
and Infineon (Germany)] and benchmarks them to identify
some of the technologies considered essential to achieve
reliable operation at high junction temperatures. We review
performance data deemed essential to the system designer
but that are often not provided, or are provided with insufficient clarity for quality assurance purposes.
Although several publications [3]-[5] report the electrical performance and comparisons of these advanced SiC
transistors, in this article, we show how deep physical
2329-9207/19©2019IEEE
http://www.ISTOCKPHOTO.COM/SANDIPKUMAR
IEEE Power Electronics Magazine - June 2019
Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - June 2019
Contents
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IEEE Power Electronics Magazine - June 2019 - Cover2
IEEE Power Electronics Magazine - June 2019 - Contents
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