IEEE Power Electronics Magazine - June 2019 - 42
of a broad statistical sample; however, it can be viewed
as indicative.
Figure 7 illustrates the procedure used to extract and
analyze the different components of the on-resistance
based on electrical Id-Vd -Vg data, physical analysis, and
a nd should be eva luated. Never theless, it is wor th
observing that manufacturers are continuously striving
to improve the SiC wafer and epilayer fabrication process. Since few devices were evaluated, the presented
measured data cannot be considered as representative
Device A
Device B
Device C
P: Pitch
n+
P: Pitch
Source
n+
Body
p+
Gate
Gate Trench
p p+
G
p
p+
Repi
G
p+
p
p+
n-
Rsub
Rch
Source
p+
p
Rjfet
Repi
Drain
Contact
p+
n+
n+
Source
Gate
n+
p+
p+
n+
n+
p+
Rjfet
Repi
Rsub
n+
n+
p+
n+
n+
p Gate
p+
p+
Rch Gate
p
n-
Rsub
n+
P: Pitch
n+
n+
p+
Drain
p+
n-
n+
Drain
P = 6 µm
N+
N+
N+
P+
N+
P-
Trench
Source Trench
Gate
+
+
Poly N p+ N
P
Gate
Poly N+
N+
P
P
P+ w = 1 µm P+
t
a = 1 µm
2 µm
Source Metal
ILD
Trench
P = 3.2 µm
P = 6.1 µm
N-
N-
Double Trench Structure
Planar-Gate Structure
Asymmetrical Trench-Gate-Structure
FIG 5 The structure analysis of the evaluated 1,200-V SiC MOSFETs. ILD: interlayer dielectric.
1.E-07
IdOFF/A-A
Device C
Device E
Device B
Device A
1.E-05
1.E-06
1.E-07
Off-State Drain Current,
IdOFF/AA (A /mm2) at Vds = 800 V
Drain Current Density, IdOFF/AA (A /mm2)
1.E-04
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
0
200
400 600 800 1,000 1,200
Drain Voltage, Vds (V)
(a)
IdOFF/A-B
IdOFF/A-C
1.E-08
1.E-09
1.E-10
1.E-11
0
50
100
150
Junction Temperature, Tj (°C)
200
(b)
FIG 6 A comparison of the off-state drain-leakage current of SiC MOSFETs from different manufacturers. High leakage current is an
indication of the potentially higher defect density (quality) of the SiC epilayer. (a) The measured drain-voltage dependence at 25 °C
and (b) temperature dependence of the off-state drain current IOFF (at Vgs = 0 V and Vds = 800 V) of the three evaluated SiC MOSFETs.
42
IEEE POWER ELECTRONICS MAGAZINE
z June 2019
IEEE Power Electronics Magazine - June 2019
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