IEEE Power Electronics Magazine - June 2021 - 23

About the Author
Z. John Shen (johnshen@ieee.org) is
the Grainger Professor of Electrical
and Computer Engineering, Illinois
Institute of Technology, Chicago, IL,
USA. He has authored and co-authored
over 300 journal and conference publications
and holds 18 issued US patents.
He is an IEEE Fellow and has
served IEEE Power Electronics Society
in various capacities. He obtained
his Master's and Ph.D. degrees in electrical
engineering from Rensselaer
Polytechnic Institute, Troy, NY, USA.
References
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[2] J W. Palmour, " Silicon carbide power device
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[3] " Power SiC: Materials, devices and applications
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[4] " Status of the power electronic industry 2020
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[5] " Global power semiconductor market
research report, " HIS Markit, 2019.
[6] Toshiba. https://toshiba.semicon-storage.com/
ap-en/semiconductor/knowledge/faq/linear_high
-voltage-ipds/high-voltage01.html
[7] Toshiba. https://www.toshiba.co.jp/tech/
review/1998/high98/electronic/e3/index.htm
[8] T. Jahns, " Special session presentation,
ECCE2020, " 2020.
[9] W. Xie, J. A. Cooper, and M. R. Melloch,
" Monolithic NMOS digital integrated circuits in
6H-SiC, " IEEE Electron Device Lett., vol. 15, no.
11, 1994. doi: 10.1109/55.334665.
[10] D. B. Slater, G. M. Johnson, L. A. Lipkin, A. V.
Suvorov, and J. W. Palmour, " Demonstration of a
6H-SiC CMOS technology, " in Proc. Device Res.
Conf., June 1996, pp. 162-163.
[11] P. G. Neudeck et al., " Year-long 500C operational
demonstration of up-scaled 4H-SiC JFET
integrated circuits, " J. Microelectron. Electron.
Packag., vol. 15, no. 4, pp. 163-170, Oct. 2018.
doi: 10.4071/imaps.729648.
[12] M. Alexandru, V. Banu, M. Vellvehi, P. Godignon,
J. Millan, " Design of logic gates for high
temperature and harsh radiation environment
made of 4H-SiC MESFET, " in Proc. CAS Proc.
Int. Semiconductor Conf., 2010.
[13] S. Kargarrazi, L. Lanni, S. Saggini, A. Rusu, and
C.-M. Zetterling, " 500°C bipolar SiC linear voltage
regulator, " IEEE Trans. Electron Devices, vol. 62,
no. 6, 2015. doi: 10.1109/TED.2015.2417097.
[14] A Abbasi et al., " Characterization of a silicon
carbide BCD process for 300°C circuits, " in Proc.
IEEE 7th Workshop on Wide Bandgap Power
Devices Appl. (WiPDA), 2019.
[15] Z. John Shen, " SiC research beyond power
MOSFET: How do we make it happen? " presented
at the National Science Foundation
Mid-Scale Research Infrastructure Engineering
Workshop, Univ. of Arkansas, Aug 13-14, 2020.
[16] C. A. Bower, M. A. Meitl, S. Bonafede,
and D. Gomez, " Heterogeneous integration of
microscale compound semiconductor devices by
micro-transfer-printing, " in Proc. IEEE 65th Electron.
Components Technol. Conf. (ECTC), 2015.
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https://toshiba.semicon-storage.com/ap-en/semiconductor/knowledge/faq/linear_high-voltage-ipds/high-voltage01.html https://toshiba.semicon-storage.com/ap-en/semiconductor/knowledge/faq/linear_high-voltage-ipds/high-voltage01.html https://toshiba.semicon-storage.com/ap-en/semiconductor/knowledge/faq/linear_high-voltage-ipds/high-voltage01.html https://www.toshiba.co.jp/tech/review/1998/high98/electronic/e3/index.htm https://www.toshiba.co.jp/tech/review/1998/high98/electronic/e3/index.htm http://www.omicron-lab.com/ http://www.omicron-lab.com

IEEE Power Electronics Magazine - June 2021

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