IEEE Power Electronics Magazine - June 2021 - 37

In order to perform a meaningful and fair comparison
between the different devices, the normalized plot of SC
dissipated power per unit area
ure ()tsc,f
(PA)d
/
versus time-to failis
introduced (Figure 6), based on equations (1)
and (2) in the previous section. In these graphs, the transistor
catastrophically fails when a critical temperature
T ,j crit
,
is reached. In Figure 6, the symbols represent actual
measured data. In the graph, the theoretical plots of tsc,f
350
300
250
200
150
100
50
1,200
1,000
800
600
400
200
0 123 4
Time, t(µs)
(a)
Device
Destruction
t1
567 0123 4
Time, t(µs)
(b)
tsc,f
56 7
FIG 3 Short circuit transient. (a) Measured () and SPICE model simulation (lines) of the drain current and (b) extracted transistor
temperature by electro-thermal model.
Vendor
Table 1. Characteristics of the evaluated 1200 V SiC MOSFETs.
A
B
Technology
Generation
Electrical
Speces
1
2
3
4
5
Structural
6
7
8
Qualification Level
RON/DC Id
Gm/W
Ciss/A
Specific ON
resistance RONxA
Die Size
Transistor cell
configuration
Die photograph
Units
mΩ/A
S/mm
pF/mm2
mX·mm2
mm2
A3
Automotive
80/31
1.5
107
440
7.3
Double Trench
B3
Industry
75/30
6.0
201
375
6.7
Planar Gate
C
D
C1
Automotive
80/44
6.7
192
464
8.7
Planar Gate
D1
Industry
45/52
6.5
171
369
11.6
Asymmetrical Trench
ShortCircuit
at
600 V
9
10
11
12
Peak SC Current Isc,pk/W
SC Time (to Failure)tsc,f
SC Critical
Energy-to-Failure Esc,f
SC Critical
Temperature, Tj,crit
13 SC-induced Gate Current
turn-on time, t1
14
15
SC Critical Energy
at t = t1, Esc,t1
Limiting mechanism
µs
J
~6
0.63
Gate Leak
~2.6
0.26
Gate Leak
~2.2
0.27
Gate Leak
*Gate current . 0
0.74
Al Melting
June 2021 z IEEE POWER ELECTRONICS MAGAZINE 37
A/mm
µs
J
0.084
~7
0.86
°C
~1100-1200
0.203
5.4
0.54
~1100-1200
0.141
5.6
0.56
~950
0.103
7.2
0.73
~700
Drain Current Id (A) at Vds = 600 V
Device Temperature, Tj (°C)

IEEE Power Electronics Magazine - June 2021

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