IEEE Power Electronics Magazine - June 2022 - 38

CukTech 65 W-1 C (GaNSense GaN)
Size: 51 cc
Topology: HFQR
Fsw: 160 kHz
XFMR: Planar
EFF (90 VAC/100%): 92.6%
deltaTcase: 41 C
+2.5x Faster, -3x Smaller, +2.1% Higher EFF,
-14 C Cooler!
Apple 61 W-1 C (Silicon)
Size: 149 cc
Topology: LF Flyback
Fsw: 65 kHz
XFMR: Bobbin
EFF (90 VAC/100%): 90.5%
deltaTcase: 55 C
FIG 12 CukTech 65 W-1C USB-C-PD adapter using fully-integrated
GaNFast IC with GaNSense.
we come closer to that full realization in everyday products
in our daily life of the capability of wide bandgap semiconductor
power switches, like GaN. We are on the right path
through cost-effective and reliable e-Mode, focusing on high
integration, and working together with the leading designers
in the world to solve their toughest challenges. Now that we
see proof in the capability in real high-volume production as
seen in mobile travel adapters and chargers available, the
industry should expect to see these capabilities of GaNFast
power ICs make their way into other USB charging wall and
furniture outlets, EV charging, server and telecom datacenters,
and renewable energy among others.
About the authors
John Stevens is currently director of business development
at Navitas Semiconductor and is based out of Dallas,
TX, USA. He has held various power electronics IC product
definition, development, and marketing leadership roles at
Texas Instruments over the previous 12 years. He has supported
customers in ac/dc mobile and consumer electronics,
telecommunications power, as well as industrial and
automotive bias supplies. Stevens holds a Bachelor of Science
degree in Electrical Engineering from Clarkson University,
Potsdam, NY, USA.
Tom Ribarich is currently senior director of strategic
marketing at Navitas Semiconductor and is based out of
Southern California, USA. He has 30+ years of experience
in the power electronics industry. Prior to joining Navitas,
Ribarich was director of lighting ICs at International
Rectifier for 19 years. His past experience includes electronic
ballast and ASIC design, development of high-voltage
drivers and lighting control ICs, system architecture and
product definition, global business development and customer
support. Ribarich holds 40+ patents and has published
numerous technical papers and articles. He holds
a Bachelor of Science degree in Electrical Engineering
from California State University, Northridge, USA and a
Master of Science in IC Design from HSR Hochschule fur
Technik Rapperswil, Switzerland.
Stephen Oliver is presently VP of corporate marketing
and investor relations at Navitas Semiconductor and is
based in Boston, MA, USA. He has over 25 years of experience
in the power semiconductor and power supply industries
worldwide. Most recently, Oliver served as VP of the
VI Chip product line at Vicor, creating over $200M in revenue
with blue chip server, telecom, industrial and defense
companies. Prior to that he was with Motorola, Philips
(NXP) and International Rectifier (Infineon). Oliver holds
several patents in power semiconductors, and is a Chartered
Engineer. He was recently VP, President and Chairman
of the Power Source Manufacturers Association . Oliver
holds a B.Eng (Hons) in Electrical & Electronic Engineering
from Manchester University (UK) and an MBA in
Global Marketing & Strategy from the UCLA Anderson
School of Management, USA.
References
[1] P. Parikh, Y. Wu, and L. Shen, " Commercialization of high 600V GaN-onsilicon
power HEMTs and diodes, " in Proc. IEEE EnergyTech, May 2013,
pp. 1-5, doi: 10.1109/EnergyTech.2013.6645300.
[2] Z. Liu, X. Huang, W. Zhang, F. C. Lee, and Q. Li, " Evaluation of high-voltage
cascode GaN HEMT in different packages, " in Proc. IEEE APEC, Mar.
2014, pp. 168-173, doi: 10.1109/APEC.2014.6803305.
[3] X. Huang, T. Liu, B. Li, F. C. Lee, and Q. Li, " Evaluation and applications
of 600 V/650 V enhancement-mode GaN devices, " in Proc. IEEE 3rd Workshop
Wide Bandgap Power Devices Appl. (WiPDA), 2015, pp. 113-118, doi:
10.1109/WiPDA.2015.7369318.
[4] Kinzer and Oliver, " Monolithic HV GaN power ICs: Performance & application, "
IEEE Power Electron. Mag., vol. 3, no. 3, pp. 14-21, Sep. 2016, doi:
10.1109/MPEL.2016.2585474.
[5] D. Kinzer and S. Oliver. " GaN matures for industry with monolithic
power ICs. " Power Electronics Europe. https://www.power-mag.com/pdf/
feature_pdf/1464269983_Navitas_Feature_Cover.pdf (Accessed: Feb. 2022).
[6] D. Kinzer and S. Oliver. " GaN matures for industry with monolithic
power ICs. " Power Electronics Europe. https://www.power-mag.com/pdf/
issuearchive/82.pdf (Accessed: Feb. 2022).
[7] " Current sensing power MOSFETs. " Onsemi. https://www.onsemi.com/
pub/Collateral/AND8093-D.PDF (Accessed: Feb. 2022).
38 IEEE POWER ELECTRONICS MAGAZINE z June 2022

https://www.power-mag.com/pdf/feature_pdf/1464269983_Navitas_Feature_Cover.pdf https://www.power-mag.com/pdf/feature_pdf/1464269983_Navitas_Feature_Cover.pdf https://www.power-mag.com/pdf/issuearchive/82.pdf https://www.power-mag.com/pdf/issuearchive/82.pdf https://www.onsemi.com/pub/collateral/and8093-d.pdf https://www.onsemi.com/pub/collateral/and8093-d.pdf

IEEE Power Electronics Magazine - June 2022

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