IEEE Power Electronics Magazine - June 2022 - 72

report, each GaN IC saves 4 kg of CO2. So, the faster customers
can adopt GaN, the better it will be for our environment.
GaN could save up to 2.6 Gtons CO2 per year by 2050, stated
Anthony Schiro, Navitas' VP Quality and Sustainability. "
The unprecedented 20-year limited warranty is
founded on Navitas' holistic approach to product reliability
through design, testing, characterization and certification.
As the pioneer in GaN power ICs and a founding
member of the industry's JEDEC JC-70.1 GaN standards
committee, Navitas developed proprietary high-speed
production and qualification testing to set new standards
in GaN reliability.
Lastly, Texas Instruments demonstrated high power density
800 V, 11-kW three-level, three-phase, GaN-based active
neutral-point clamped inverter using its 600-V LMG3422R030
GaN FET and C2000 real-time MCU, which enables high
switching frequency to reduce magnetics size, increase power
density, and achieve 98.5% peak efficiency in EV charging and
solar-power applications, according to TI. . This converter was
designed for EV powertrain components, such as onboard
chargers (OBCs), which are facing the formidable challenge of
increasing power rating without a proportionate increase in
size and volume. Consequently, TI's OBCs offer power ratings
of 6.6 kW through 11 kW with power densities of 4 kW/liter
while adding new features such as bidirectional operation and
support for 800 V batteries.
Expanding SiC Portfolio
On the silicon carbide (SiC) front, Microchip Technology
Inc. announced the expansion of its SiC portfolio with the
release of the industry's lowest on-resistance (25 mΩ) 3.3 kV
SiC MOSFETs and 3.3 kV, 90 A rated SiC Schottky barrier
diodes (SBDs). The designers can take advantage of the ruggedness,
reliability and performance of these devices to
develop smaller, lighter and more efficient power systems
for electrified transportation, renewable energy, aerospace
and industrial applications, said the maker. The 3.3 kV
MOSFETs and SBDs join the company's comprehensive
portfolio of 700 V, 1200 V and 1700 V die, discretes, modules
and digital gate drivers.
Both MOSFETs and SBDs are available in die or package
form. In a statement, Leon Gross, vice president of Microchip's
discrete product business unit said, " Our new family of
3.3 kV SiC power products allows customers to move to highvoltage
SiC with ease, speed and confidence and benefit from
the many advantages of this exciting technology over siliconbased
designs. "
Concurrently, ROHM Semiconductor displayed its fourth
generation 1200 V SiC MOSFETs with industry-leading low
on-resistance (18 mΩ) without sacrificing short-circuit robustness.
Additional features include low switching loss and support
for 15 V gate-source voltage that contributes to further
device power savings. Housed in a four-pin through-hole
TO-247N/TO-247-4L package, the manufacturer has readied
a number of evaluation boards (P04SCT4018KE-EVK-001/
P05SCT4018KR-EVK-001) with onboard gate driver and
72 IEEE POWER ELECTRONICS MAGAZINE z June 2022
peripheral circuits to reduce evaluation time for the designers.
In addition, ROHM also displayed OBC using its fourth
generation 1200 V SiC MOSFET for Lucid, an advanced luxury
electric vehicle (EV) company headquartered in California.
This OBC unit is designed for Lucid Air. It integrates a dc-dc
converter and the bidirectional OBC, where an advanced PFC
circuit is capable of operating at high switching frequencies
because of the high performance of the SiC MOSFET, said
ROHM. The improved performance at high frequency and high
temperature of ROHM's SCT3040K and SCT3080K SiC MOSFETs
have helped Lucid to reduce the size of the design, and to
reduce power losses, which results in high charging efficiency.
Meanwhile, GeneSiC Semiconductor disclosed its fourth
generation 750 V SiC MOSFET with further drop in on-state
resistance at operating temperatures and excellent performance
in short circuit withstand capability and avalanche
ruggedness. The fourth generation 750 V SiC MOSFET is also
automotive qualified.
Advanced Silicon Solutions
Concurrently, silicon vendors were also busy exhibiting
their technologies and products that offered leading-edge
solutions. Eggtronic, for instance, demonstrated a number
of technologies aimed at improving the performance and
efficiency of power conversion and wireless power transfer.
The company showed how ZVS can be combined with a
proprietary controller to create a novel architecture (Figure
5) that replaces the conventional boost PFC input stage
and LLC stage with a single-stage converter capable of controlling
both input current and output voltage. Known as
SmartEgg and designed for applications in the 100 W to
1 kW range, the new high-performance solution offers the
promise of reduced energy consumption and smaller form
factors in applications ranging from adapters and chargers
for high-performance laptops to power adapters for PCs,
home appliances and TV panels.
In addition, Eggtronic also demonstrated its capacitive
wireless power technology called Eden, which ensures total
positional freedom for wireless charging. Thanks to the proprietary
Eden capacitive wireless matrix, this incredible feature
has been made a reality by Eggtronic.
Empower Semiconductor, Inc. displayed what it claims
to be the industry's smallest and fastest integrated voltage
regulator (IVR), integrating all the necessary elements in
a single device. In essence, it is a multioutput dc-dc voltage
regulator system that requires no external components on
the PCB. According to Empower, IVRs are high-performance
power management chips designed to provide efficiency,
size, and cost benefits to energy-hungry, data-intensive,
electronics applications. Joining the family was a new digitally
configurable EP71xx series that can deliver complete
voltage regulation and protection functionality without the
need for external discrete components (Figure 6). Rated for
12 A of continuous current with up to four voltage regulators
in a single FcCSP package that measures just 5-mm #
7-mm and only 0.7-mm in height! Other features include
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