IEEE Power Electronics Magazine - March 2015 - 1
www.pels.org
Vol. 2, No. 1
March 2015
For your engineering success
Features
20
GaN: A Reliable Future in Power Conversion
27
Fulfilling the Promise of High-Temperature
Operation with Silicon Carbide Devices
Dramatic performance improvements at a lower cost
Alex Lidow, Johan Strydom, Robert Strittmatter,
and Chunhua Zhou
Eliminating bulky thermal-management systems with SJTs
Ranbir Singh and Siddarth Sundaresan
Never fear, super power devices are here! Widebandgap (WBG) power devices are changing the
power game. With multiple suppliers, off-the-shelf
availability, rising production, and falling prices,
analysts predict good growth for both gallium
nitride- and silicon carbide-based power devices for
the next few years. As the adoption of WBG
technologies improves, the market dynamics are
simultaneously changing. Besides elevating the
performance of traditional power supplies, WBGbased power devices also enable many emerging
applications that were beyond the reach of silicon.
WBG-based power devices are prepared for growth,
and the transition has begun.
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IMAGES LICENSED BY INGRAM PUBLISHING
GaN Devices in Resonant LLC Converters
42
Wide-Bandgap-Based Power Devices
System-level considerations
Michael D. Seeman
Reshaping the power electronics landscape
Ashok Bindra
42
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On the cover
36
Departments
& Columns
4
8
11
12
16
48
51
53
56
From the Editor
President's Message
Patent Reviews
Happenings
A Look Back
Society News
Member News
Event Calendar
White Hot
Digital Object Identifier 10.1109/MPEL.2014.2383333
March 2015
IEEE POWER ELECTRONICS MAGAZINE
1
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Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - March 2015
IEEE Power Electronics Magazine - March 2015 - Cover1
IEEE Power Electronics Magazine - March 2015 - Cover2
IEEE Power Electronics Magazine - March 2015 - 1
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IEEE Power Electronics Magazine - March 2015 - Cover3
IEEE Power Electronics Magazine - March 2015 - Cover4
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