100% 90% 80% 6.5-kV JFET 70% 60% 50% 40% 30% 20% 10% 0% fig 1 The 6.5-kV enhancement-mode JFET and 60-A, 20-kHz halfbridge module with Tmax = 200 °C. (Image used with permission from USCi.) IGBTs at 10-20 kV Bipolar devices have been an area of intense research and development within the SIC community for many years. However, concerns regarding 1,200 V 1,700 V 3,300 V 4,500 V 6,500 V 10 KV FOL Process + Saw Epi Substrate fig 2 The cost breakdown of high-voltage SiC power devices. (Image used with permission from USCi.) device reliability and assuring that devices will not degrade due to basal plane defect propagation have limited their adoption. Nevertheless, it is clear that they will play an important role in March 2015 delivering lower on-resistance devices. This is particularly true in very highvoltage devices (>10 kV) as the drift layer resistance dominates the device on-resistance. To reduce this resistance, z IEEE PowEr ElEctronIcs MagazInE 13