IEEE Power Electronics Magazine - March 2016 - 44

tive dc-dc converters with high input voltage switching at higher frequencies.
Technology Push
* WBG Semiconductors
Furthermore, this session also explored
* Digital Control
integration challenges for MV converters.
* Advanced Design and Packaging
A paper by Wim Van der Merwe of ABB
* Standardized
Performance
Corporate Research investigated integra* 3-D Integrated
* Reliable
tion technologies for a fully modular and
* Cost Optimized
hot swappable MV multilevel concept con* Plug and Play
verter. The modularity in this MMC includ* Environmentally Friendly
Market Pull
ed scalability (voltage, power, number of
* Smart Grids
levels, etc.), configurability (functionality,
* Green/Smart Buildings
* HEV and E-Mobility
features, applications, etc.), and pluggabilTime
ity (assembly, commissioning, servicing,
2010
2025
etc.). The integrated technologies investiFIG 15 Predicting the next level of integration by 2025. (Photo courtesy of ETH
gated include inductive power transfer for
Zurich.)
auxiliary power, thermosyphon cooler in
air-cooled cabinets, solid-insulated PEBB
enclosures,
and
control
and communications for adaptable
electronics integration will confront many hurdles. Hence,
and reconfigurable converters. Combining the modular
key challenges of system-level integration were further distopology and the integration technologies outlined in the
cussed and debated in the last session of the workshop
paper, Van der Merwe demonstrated the feasibility of the
Power Electronics Integration chaired by Prof. Johann W.
concept converter with Pout = 0.55 MW, Vdc = 3.3 kV, and
Kolar of ETH Zurich, Switzerland. While advances in packaging and passives, including magnetics, will be vital for
I out_rms = 460 A.
achieving improvements in integration, Prof. Kolar's preIn short, the presenters envisioned the future integrated
sentation hinted that raising the bar of system-level integragrid to be driven by a large amount of resources enabled
tion in the future would require new design and test and
by power electronics and distributed intelligence. To get
measurement tools, along with dedicated power electronthere, a number of converter networks/systems challenges
ics fabs (Figure 15).
must be addressed. Future transportation electrification
With WBG devices gaining momentum, Dan Kinzer,
requires huge onboard power processing, as well as imchief technology officer of start-up Navitas Semiconducproved reliability of power devices and their respective
tor, took a quick look at integration in the GaN arena. In
packages, and energy storage poses a big challenge. Morehis paper "Integrated GaN Technology for High-Frequency
over, high-voltage, high-temperature power devices will be
Converters," Kinzer indicated that GaN power ICs will reneeded, including bidirectional devices. Three-dimensional
define tradeoffs between energy savings versus switching
printing will enable cost reductions, and new materials will
frequencies to deliver dramatic improvements in energy
improve passives integration and challenge copper. Finally,
savings, size, weight, and cost. Toward that goal, Navitas is
advances in software tools will be needed to advance sysdeveloping all GaN power ICs incorporating power, driver,
tem level integration and nanotechnology must be tapped
and control on a single chip based on the GaN-on-silicon
to enable high current densities.
technology. Concurrently, the company is also pushing the
According to the organizers, FEPPCON is a biannual
switching performance of 650-V GaN power devices to a
PELS strategic planning conference. Approved presentanew high (>27 MHz). However, details were not provided.
tions from FEPPCON VIII will be available on the PELS
Continuing the discussion on integration, Bernhard
website; http://www.ieee-pels.org/.
Wicht of Robert Bosch Center for Power Electronics and
Reutlingen University, Germany, explored the challenges
About the Author
of integrating fast-switching high-input-voltage inductive
Ashok Bindra (bindra1@verizon.net) is the editor-in-chief of
and capacitive dc-dc converters. Wicht's paper argued that
IEEE Power Electronics Magazine and a veteran writer and
modern high input voltage (Vin) inductive converters are opeditor with more than 30 years of editorial experience covering
power electronics, analog/RF technologies, and semiconducerating at <5 MHz, but advances in technology and circuit
tors. He has worked for leading electronics trade publications
design can push this limit to 30 MHz. Wicht and his team are
in the United States, including Electronics, EE Times, Elecinvestigating a zero-voltage switching topology, in combinatronic Design, Power Electronics Technology, and RF Design.
tion with integrated passives and low-inductance interconnects and EMI reduction techniques to work concurrently in
harmony to achieve the end results. The ultimate goal is to
Reference
switch at 100 MHz. Likewise, similar efforts are underway
[1] D. Divan, R. Moghe, and A. Prasai, "Power electronics at the grid edge,"
at Robert Bosch and Reutlingen University to enable capaciIEEE Power Electron. Mag., vol. 1, no. 4, pp. 16-22, Dec. 2014.

IEEE PowEr ElEctronIcs MagazInE

z March 2016

http://www.ieee-pels.org/

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - March 2016