IEEE Power Electronics Magazine - March 2023 - 74

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fast SiC dV/dt, the BD-SSCB actuated three
orders of magnitude faster than conventional
mechanical circuit breakers and can provide
dramatic improvements in reliability and
operating life, resulting in superior system
protection and reduced system maintenance
and repair. The common drain bidirectional
switch configuration of Figure 2(b) has
recently been fabricated and tested in circuits
[5]. The anti-series device configurations of
Figure 2 can be monolithically integrated in a
single chip on the wafer simplifying packaging
and reducing parasitic inductances. SiC
MBD fabrication utilizes the same processes
of standard SiC switches, thereby exploiting
that platform's volumes, yields, and performance
metrics. Compared to similarly rated
conventional unidirectional vertical MOSFETs/JFETs,
the bidirectional " two antiseries
connected devices " configurat ion
doubles total resistance. This is in contrast to
the lateral GaN dual-gate bidirectional solution,
where the common shared drift layer
minimizes resistance. Indeed, for the " two
anti-series connected devices " bidirectional
SiC switch to equal the resistance of a single
unidirectional device, the chip area must
increase by 4X.
MBD switches provide opportunities for
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dramatically improving key performance metrics
of dc-ac and ac-ac power converters,
including their power density, efficiency, EMI
suppression, and eventually cost. Three types
of three-phase ac-ac converter topologies
that are advantageously realized (high efficiency,
high power density, and low circuit
complexity) with MBD switches are indirect
matrix converters, direct matrix converters,
and current-source converters. While the
compelling advantages of matrix converters
for direct ac-ac power conversion have long
been recognized, the unavailability of MBD
switches has prevented matrix converters
using the baseline 3 × 3 matrix of ac switches
from achieving wide commercial success.
Another opportunity for MBD switches is
their application in a T-Type switching cell
topology that provides the basis for designing
high-performance SiC/GaN-based multi-level
voltage-source inverters that can achieve
appealingly high power density and efficiency.
MBD switches also enable current-sourceinverter
based integrated motor drives, which
combine motors and drives into the same
housing, allowing for major improvements
including higher power density and efficiency,
74 IEEE POWER ELECTRONICS MAGAZINE z March 2023
http://www.deantechnology.com
IEEE Power Electronics Magazine - March 2023

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