www.pels.org Vol. 3, No. 3 September 2016 For your engineering success Features 14 Monolithic HV gan Power Ics 22 Inductive Power transfer for Electric Vehicle charging Performance and application Dan Kinzer and Stephen Oliver Technical challenges and tradeoffs Roman Bosshard and Johann W. Kolar 31 on the cover Monolithic integration of gallium nitride (GaN) drive and logic circuits with GaN power FETs signals a new era in power conversion design. GaN power ICs promise to take density, energy efficiency, and system cost to new extremes while accelerating the adoption of GaN power devices. Power Module Integration A new approach David Cooper THE GAN WAFER IMAGE IS PROVIDED BY EPIGAN, BELGIUM. BACKGROUND IMAGE LICENSED BY GRAPHIC STOCK Departments & Columns 4 8 12 38 40 48 54 56 60 48 From the Editor President's Message Patent Reviews Entrepreneur Viewpoint Member and Industry Profile Society News Member News Event Calendar White Hot Digital Object Identifier 10.1109/MPEL.2016.2593540 September 2016 z IEEE PowEr ElEctronIcs MagazInE 1http://www.pels.org