Power modules with CoolSiC™ MOSFET Halfbridge and booster topology in Infineon's Easy 1B housing Infineon CoolSiC™ MOSFETs have unique advantages › Superior gate oxide reliability › Threshold voltage, Vth > 4 V › IGBT compatible driving (+15 V) › Application oriented short-circuit robustness SiC characteristics bring unbeatable performance › Doubling power density › Boosted efficiency › Reduction of total system cost › Smaller housing and design CoolSiC™ - Revolution to rely on Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging, and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio. www.infineon.com/CoolSiChttp://www.infineon.com/CoolSiC