IEEE Power Electronics Magazine - September 2019 - 31

Sayan Acharya (sachary@ncsu.edu) received his B.E.
and M.Tech degrees, both in electrical engineering, from
Jadavpur University, Kolkata, India, in 2008 and the Indian
Institute of Technology, Kharagpur, in 2010, respectively.
From 2010 to 2013, he was with Emerson Network Power
Pvt. Ltd., Thane, India. He received his Ph.D. degree from
North Carolina State University, Raleigh, in 2019. While working toward his Ph.D. degree, he was with General Electric
Global Research Center, Niskayuna, New York, as a research
intern. His research interests include wide-bandgap, devicebased power electronics converters, gate driver design, active
gate-driving techniques for silicon-carbide devices, and highpower converters. He is a Student Member of the IEEE.
Subhashish Bhattacharya (sbhatta4@ncsu.edu)
received his B.E. degree from the Indian Institute of Technology, Roorkee, in 1986; his M.E. degree from the Indian
Institute of Science, Bengaluru, in 1988; and his Ph.D.
degree from the University of Wisconsin-Madison, in 2003,
all in electrical engineering. He was with the Flexible AC
Transmission Systems and Power Quality Division, Westinghouse/Siemens Power Transmission and Distribution from
1998 to 2005. In August 2005, he joined the Department of
Electrical and Computer Engineering, North Carolina State
University, Raleigh, where he is currently the Duke Energy
Distinguished Professor in Electrical and Computer Engineering and a founding faculty member of the National Science Foundation's FREEDM Systems Center and the U.S.
Department of Energy PowerAmerica Institute. A portion of
his Ph.D. research on active power filters was commercialized by York Corporation for air conditioner chillers. His
research interests include solid-state transformers, mediumvoltage power converters, FACTS, utility applications, highfrequency magnetics, and power-conversion applications of
silicon-carbide devices. He is a Senior Member of the IEEE.

[7] S. Hazra, S. Madhusoodhanan, G. K. Moghaddam, K. Hatua, and S. Bhattacharya, "Design considerations and performance evaluation of 1200-V
100-A SiC MOSFET-based two-level voltage source converter," IEEE Trans.
Ind. Appl., vol. 52, no. 5, pp. 4257-4268, 2016.
[8] S. Hazra et al., "High switching performance of 1700-V, 50-A SiC power
MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications," IEEE Trans. Power Electron., vol. 31, no. 7, pp. 4742-4754, 2016.
[9] X. Zhang et al., "A 15 kV SiC MOSFET gate drive with power over fiber
based isolated power supply and comprehensive protection functions," in Proc.
IEEE Applied Power Electronics Conf. (APEC) Expo., 2016, pp. 1967-1973.
[10] A. Anurag, S. Acharya, Y. Prabowo, G. Gohil, and S. Bhattacharya,
"Design considerations and development of an innovative gate driver for
medium-voltage power devices with high dv/dt," IEEE Trans. Power Electron., vol. 34, no. 6, pp. 5256-5267, 2019.
[11] J. Wang, H. S. Chung, and R. T. Li, "Characterization and experimental
assessment of the effects of parasitic elements on the MOSFET switching performance," IEEE Trans. Power Electron., vol. 28, no. 1, pp.
573-590, 2013.
[12] S. Acharya, X. She, F. Tao, T. Frangieh, M. H. Todorovic, and R. Datta,
"Active gate driver for SiC-MOSFET-based PV inverter with enhanced operating range," IEEE Trans. Ind. Appl., vol. 55, no. 2, pp. 1677-1689, 2019.
[13] A. Tripathi, K. Mainali, S. Madhusoodhanan, A. Yadav, K. Vechalapu, and
S. Bhattacharya, "A MV intelligent gate driver for 15 kV SiC IGBT and 10
kV SiC MOSFET," in Proc. IEEE Applied Power Electronics Conf. (APEC)
Expo., 2016, pp. 2076-2082.
[14] S. Hazra, K. Vechalapu, S. Madhusoodhanan, S. Bhattacharya, and K.
Hatua, "Gate driver design considerations for silicon carbide MOSFETs
including series connected devices," in Proc. IEEE Energy Conversion
Congr. Expo. (ECCE), 2017, pp. 1402-1409.
[15] Murata Manufacturing Co., Ltd., "Murata: MGJ2 Series." Accessed on
May 29, 2019. [Online]. Available: https://power.murata.com/pub/datasheet?/
data/power/ncl/kdc_meu1.pdf
[16] K. Vechalapu, S. Hazra, U. Raheja, A. Negi, and S. Bhattacharya, "Highspeed medium voltage (MV) drive applications enabled by series connection
of 1.7 kV SiC MOSFET devices," in Proc. IEEE Energy Conversion Congr.

References

Expo. (ECCE), 2017, pp. 808-815.

[1] J. W. Palmour et al., "Silicon carbide power MOSFETs: Breakthrough

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[18] A. Anurag, S. Acharya, Y. Prabowo, V. Jakka, and S. Bhattacharya,

[3] J. Millan, P. Godignon, X. Perpi, A. Prez-Toms, and J. Rebollo, "A survey of

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[19] K. Mainali, R. Wang, J. Sabate, Y. Veer Singh, and S. Klopman, "Design

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W. Palmour, "Comparative evaluation of 15-kV SiC MOSFET and 15-kV

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2017, pp. 2552-2559.

September 2019

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IEEE Power Electronics Magazine - September 2019

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - September 2019
