IEEE Power Electronics Magazine - September 2020 - 34

VSoff = 0 V, t = 50 ns
VDS = 800 V, IDS = 650 A, Rg,ext = 1.1 Ω
800 V

650 A

20
10

Eoff = 8.73 mJ

-10

VDS

IDS

6
-0
1.
0E

5.
0E

-0

0
+0
0.
0E

7
-0
.0
E
-5

.0
E

-0

-20

-1

-0
.5
E
-1

968 V

VGS (V)

20 V

VDS (V), IDS (A)

1,000
800
600
400
200
0
-200

VGS

FIG 10 Turn-off waveform of the 1200 V, 2.5 mX ASDAK total
SiC system solution. (Source: Microchip Technology; used with
permission.)

FIG 12 A complete three-phase implementation of the ASDAK
system solution. (Source: Microchip Technology; used with permission.)

Table 1. SiC MOSFET modules offered
in the SP6LI package.
Microchip PN

FIG 11 A package-specific adapter board is used to tightly couple the gate driver core to the SP6LI package. (Source: Microchip Technology; used with permission.)

has unified these three components into the development
kit customers have been requesting for years to streamline
their SiC journey from initial evaluation to a confident field
deployment.

Acknowledgments
The authors gratefully acknowledge the valuable contributions of our colleagues Albert Charpentier, Charles Christman, Jason Chiang, Orlando Esparza, Adam Fender, Matthew Fisher, Mark Gabler, Reenu Garg, Aaron Heine, Mike
Innab, Bruce Odekirk, Sally Scott, Colin Shephard, Laird
Thornhill, Rob Weber, Derek Wilson, and Glenn Wright.

About the Authors
Kevin Speer (Kevin.Speer@microchip.com) joined Microchip Technology in 2020 as senior manager of SiC Solutions,
Discrete and Power Management Business Unit, where he
develops SiC product strategies and total systems solutions
needed by Microchip's power semiconductor clientele.
Since 1999, Speer has published a range of SiC research
spanning materials science to applications, including crystal
growth, defect-related device degradation, SiC MOSFET and

IEEE POWER ELECTRONICS MAGAZINE

z September 2020

VBR

RDSon
(Tj = 25 °C )

ID
(TC = 80 °C)

MSCSM70AM025CT6LIAG

700

2.5 mX

538 A

MSCSM120AM042CT6LIAG

1200

4.2 mX

394 A

MSCSM120AM03CTLIAG

1200

2.5 mX

641 A

MSCSM120AM02CT6LIAG

1200

2.1 mX

754 A

diode device design and processing, and advanced power
packaging. He has held strategic technical marketing roles
with SemiSouth Laboratories, Infineon, and Littelfuse. Just
prior to joining Microchip, he founded Speer Semiconductor, a business aimed at empowering stakeholders across
the value chain through product development and roadmapping, customer outreach, strategy and investment diligence, and market analysis. He holds a Bachelor of Science
in Electrical Engineering (BSEE) from the University of
Arkansas, a Master of Science in engineering from Case
Western Reserve University (CWRU), and a Ph.D. in electrical engineering from CWRU as a NASA Research Fellow.
Nitesh Satheesh is a technical staff engineer in Microchip Technology's Discrete and Power Management Business Unit, responsible for customer design-in and other
activities. Prior to his current role, Satheesh was general
manager for AgileSwitch India Pvt. Ltd., leading engineering
and product development, development of a state-of-the-art
high-power test lab for SiC devices, and overall facility management. Earlier Satheesh worked for Fuji Electric Corporation of America as semiconductor applications engineer for
industrial and automotive modules. He holds a Bachelor of
Engineering, Electronics and Communications from Anna
University in Chennai, India, and later was an EMECW
Scholar - European Union, with a concentration in electronics, systems and networks, at the Ecole Nationale Supérieure d'Ingénieurs des Systèmes Avancés et Réseaux,
France. He holds a Master of Science degree in electrical

IEEE Power Electronics Magazine - September 2020

Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - September 2020