IEEE Power Electronics Magazine - September 2021 - 46
process with low cost but presents potential difficulty in
heat management.
In essence, driven by the requirements of commercial
markets, monolithic methods are unable to meet the
new design challenges of power conversion electronics.
While HI technologies are offering promising solutions
to power conversion electronics with further enhanced
switching frequency, power density, conversion ratio,
and efficiency.
About the Authors
Fanyi Meng (meng.fanyi@gmail.com) received B.E. and
Ph.D. degrees from Nanyang Technological University
(NTU), Singapore, in 2011 and 2016, respectively.
From 2016 to 2018, he was with the University of Electronics
Science and Technology of China (UESTC), Chengdu,
China, as an associate professor in the School of Physics.
Since 2018, he was with the School of Microelectronics,
Tianjin University (TJU), Tianjin, China, as a full professor.
From 2019 to 2020, he was also with the Higher Education
Evaluation Center of the Ministry of Education, Beijing,
China, where he was involved in the internationalization
and accreditation of higher engineering education in China.
His current research interests include analog and radio-frequency
ICs using monolithic and heterogeneous technologies.
Dr. Meng is the recipient of Excellent Scientific and
Technological Workers of China Electronics Society in 2020.
He is a senior member of the IEEE.
Chenfei Wang received the B.S. degree in Nanjing University
of Aeronautics and Astronautics (NUAA), Nanjing,
China in 2019. She is currently pursuing the M.S. degree in
Microelectronics and Solid-State Electronic with School of
Microelectronics, Tianjin University, Tianjin, China. Her
research interests are in area of GaN/CMOS hybrid power
conversion design and power electronics base on III-V semiconductor
devices.
Ziheng Liu received the B.S. degree from Nanjing University
of Aeronautics and Astronautics (NUAA), Nanjing,
China in 2019. He is currently working towards the M.S.
degree in integrated circuit Engineering with School of
Microelectronics, Tianjin University, Tianjin, China. His current
research interests include GaN/CMOS hybrid ICs
design, resonant dc-dc converters and power electronics
base on III-V semiconductor devices.
Kaixue Ma received the B.E. and M.E. degrees from
Northwestern Polytechnical University, Xi'an, China, in 1997
and 2002, respectively, and Ph.D. degree from Nanyang
Technological University (NTU), Singapore, in 2007. He is
currently a professor and the dean of the School of Microelectronics,
Tianjin University, Tianjin, China. He has
authored or coauthored more than 200 papers in international
journals and conferences, and has filed 24 patents.
His current research interests include RF/microwave/millimeter-wave/terahertz
ICs and system design using CMOS,
GaAs monolithic microwave integrated circuit, MEMS, and
LTCC for applications such as satellite communication and
46 IEEE POWER ELECTRONICS MAGAZINE z September 2021
software-defined radio. Dr. Ma was a recipient of eight technique
awards including the best paper award. He was
named in the China Thousand Young Talent Program in
2012 and The National Distinguished Young Scholar Program
in 2016. He is on the review board of several international
journals. He has delivered 20 keynote talks. He is a
senior member of the IEEE.
Don Disney received the B.S. degree in electrical engineering
from Kettering University, Flint, MI, USA, in 1989,
and the Ph.D. degree in electrical engineering from Stanford
University, Palo Alto, CA, USA, in 1993. He has held senior
engineering and management positions at Delco Electronics,
Power Integrations, Advanced Analogic Technologies,
Monolithic Power Systems, Avogy, GlobalFoundries, and
Infineon. He is a Fellow of the IEEE
Kiat Seng Yeo (Fellow, IEEE) received the B.Eng. (EE)
and Ph.D. (EE) degrees from Nanyang Technological
University (NTU), Singapore, in 1993 and 1996, respectively.
He is a widely known authority in low-power RF/millimeterwave
IC design and a recognized expert in CMOS technology.
He was an associate chair (Research), the Head of the
Division of Circuits and Systems, and the Founding Director
of VIRTUS of the School of Electrical and Electronic Engineering,
NTU. He is currently an associate provost for
Research and International Relations with the Singapore
University of Technology and Design, Singapore. He has
authored ten books, seven book chapters, and over 600
international top-tier refereed journal and conference articles.
He holds 38 patents. He is the principal author of
World University Research Rankings 2020. Prof. Yeo was
awarded the Public Administration Medal (Bronze) on
National Day 2009 by the President of the Republic of Singapore
and the Nanyang Alumni Achievement Award in 2009
for his outstanding contributions to the university and society.
In 2020, he was conferred the Long Service Medal on
National Day by the President of the Republic of Singapore.
He was a member of the Board of Advisors of the Singapore
Semiconductor Industry Association. He holds/held key
positions in many international conferences as an advisor,
the general chair, the co-general chair, and a technical chair.
References
[1] D. Newell and M. Duffy, " Review of power conversion and energy management
for low-power, low-voltage energy harvesting powered wireless
sensors, " IEEE Trans. Power Electron., vol. 34, no. 10, pp. 9794-9805, Oct.
2019. doi: 10.1109/TPEL.2019.2894465.
[2] P. Huber and M. Mills, " Analog power, " Huber Mills Digital Power
Report, vol. 2, no. 4, April 2001.
[3] S. Moench et al., " PCB-embedded GaN-on-Si half-bridge and driver ICs
with on-package gate and DC-link capacitors, " IEEE Trans. Power Electron.,
vol. 36, no. 1, pp. 83-86, Jan. 2021.
[4] " Comparison of SiC to other semiconductors. " [Online]. Available: https://
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[5] " IST011N06NM5 60V OptiMOS™ power MOSFETs, " Infineon, Nov.
2020. [Online]. Available: https://www.infineon.com/dgdl/Infineon
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http://www.tf.uni-kiel.de/matwis/amat/semi_en/kap_a/illustr/ia_1_2.html
https://www.infineon.com/dgdl/Infineon-BSF134N10NJ3_G-DS-v02_06-en.pdf
https://www.infineon.com/dgdl/Infineon-BSF134N10NJ3_G-DS-v02_06-en.pdf
IEEE Power Electronics Magazine - September 2021
Table of Contents for the Digital Edition of IEEE Power Electronics Magazine - September 2021
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