In summary, the barriers to mass adoption of GaN power devices are rapidly falling and early adopters will have a distinct advantage over their competitors. FIG 1 Buck converter efficiency is 2% points higher. released. In appl icat ions thi s translates to higher efficiency and higher power output in a smaller footprint. Table 2 shows a comparison of a Gen 6 device against a benchmark silicon MOSFET that is eight times larger in size. Figure 1 shows that despite the GaN device being 30% higher in on-resistance and significantly smaller, the efficiency of the device in a 48-12 V buck converter at 500 kHZ is 2% points higher and the losses are almost 40% lower. About the Author Alex Lidow (alex.lidow@epc-co. com) is the CEO and the Co-Founder of Efficient Power Conversion Corporation (EPC), El Segundo, CA 90245 USA. Prior to founding EPC, he was the CEO of International Rectifier Corporation. A Co-Inventor of the HEXFET power MOSFET, he holds many patents in power semiconductor technology and has authored numerous publications on related subjects, including co-authoring the first textbook on GaN transistors, titled GaN Transistors for Efficient Power Conversion, now in its third edition published by John Wiley and Sons. He received the B.Sc. degree from Caltech and the Ph.D. degree from Stanford.http://www.paytongroup.com