IEEE Solid-State Circuits Magazine - Fall 2017 - 81

device, illustrating how powerful the
concept of the IC can be.

References

[1] B. Razavi, Design of Analog CMOS Integrated Circuits, 2nd ed. Hoboken, NJ:
McGraw-Hill, 2017.
[2] D. Binkley, Tradeoffs and Optimization in
Analog CMOS Design, 1st ed. New York:
Wiley, 2008.
[3] C. Enz, F. Chicco, and A. Pezzotta, "Nanoscale MOSFET modeling: Part I," IEEE
Solid-State Circuits Mag., vol. 9. no. 3, pp.
26-35, Summer 2017.
[4] W. Sansen, "Minimum power in analog
amplifying blocks: Presenting a design
procedure," IEEE Solid-State Circuits Mag.,
vol. 7, no. 4, pp. 83-89, Fall 2015.
[5] C. Enz and A. Pezzotta, "Nanoscale MOSFET modeling for the design of low-power
analog and RF circuits," in Proc. Int. Conf.
Mixed Design of Integrated Circuits and
Systems, June 2016, pp. 21-26.
[6] T. Melly, "Conception d'un émetteur-ré cepteur à faible consommation intégré
en technologie CMOS," Ph.D. dissertation,
EPFL, Dissertation 2231, 2000.
[7] A. Mangla, M. A. Chalkiadaki, F. Fadhuile,
T. Taris, Y. Deval, and C. C. Enz, "Design
methodology for ultra low-power analog circuits using next generation BSIM6
MOSFET compact model," Microelectronics J., vol. 44, no. 7, pp. 570-575, July
2013.
[8] A. Mangla, "Modeling nanoscale quasiballistic MOS transistors," Ph.D. diss e r t at ion , E P F L , D iss e r t at ion 6385,
2014.
[9] C. C. Enz and E. A. Vittoz, Charge-Based
MOS Transistor Modeling-The EKV Model
for Low-Power and RF IC Design, 1st ed.
Hoboken, NJ: Wiley, 2006.
[10] M. A. Chalkiadaki, "Characterization
and modeling of nanoscale MOSFET for
ultra-low power RF IC design," Ph.D.
dissertation, EPFL, Dissertation 7030,
2016.
[11] M . A . C h a l k i a d a k i a n d C . C . E n z ,
"R F small-signal and noise modeling
including parameter extraction of nanoscale MOSFET from weak to strong
inversion," IEEE Trans. Microwave Theory Tech., vol. 63, no. 7, pp. 2173-2184,
July 2015.
[12] C. Enz and M. A. Chalkiadaki, "Nanoscale
MOSFET modeling for low-power RF design using the inversion coefficient," in
Proc. Asia-Pacific Microwave Conf., Dec.
2015, vol. 1, pp. 1-3.
[13] A. Shameli and P. Heydari, "Ultra-low power RFIC design using moderately inverted
MOSFETs: an analytical/experimental
study," in Proc. Radio Frequency Integrated Circuits Symp., 2006, p. 4.
[14] A. Mangla, C. C. Enz, and J. M. Sallese,
"Figure-of-merit for optimizing the current-efficiency of low-power RF circuits,"
in Proc. Int. Conf. Mixed Design of Integrated Circuits and Systems, June 2011,
pp. 85-89.
[15] T. Taris, J. Begueret, and Y. Deval, "A 60μW
LNA for 2.4 GHz wireless sensors network

applications," in Proc. Radio Frequency Integrated Circuits Symp., 2011, pp. 1-4.
[16] Y. S. Chauhan, S. Venugopalan, M. A.
Chalkiadaki, M. A. U. Karim, H. Agarwal,
S. Khandelwal, N. Paydavosi, J. P. Duarte,
C. C. Enz, A. M. Niknejad, and C. Hu,
"BSIM6: analog and RF compact model
for bulk MOSFET," IEEE Trans. Electron
Devices, vol. 61, no. 2, pp. 234-244, Feb.
2014.
[17] C. Enz, M. A. Chalkiadaki, and A. Mangla, "Low-power Analog/RF circuit design
based on the inversion coefficient," in
Proc. European Solid-State Circuits Conf.,
Sept. 2015, pp. 202-208.
[18] F. C h icco, A . Pezzot t a , a nd C . E n z,
"Analysis of power consumption in LC
oscillators based on the inversion coefficient," in Proc. IEEE Int. Symp. Circuits
and Systems Conf., May 2017, pp. 1514-
1517.
[19] G. Guitton, A. Mangla, M. A. Chalkiadaki,
F. Fadhuile, T. Taris, and C. Enz, "Design
of ultra low-power RF oscillators based
on the inversion coefficient methodolog y using BSIM6 model," Int. J. Circuit
Theory Appl., vol. 44, no. 2, pp. 382-397,
Feb. 2016.

About the Authors
Christian Enz (christian.enz@epfl
.ch) received his Ph.D. degree from
the Sw iss Federa l Instit ute of
Technology (EPFL) in 1989. He is
c u r rently a professor at EPFL, director of the Institute of Microengineering, and head of the IC Lab.
Until April 2013, he was vice president at the Swiss Center for Electronics and Microtechnology (CSEM),
Neuchâtel, Switzerland, where he
headed the Integrated and Wireless
Systems Div ision. Before joining
C SE M , h e was a pr incipa l senior
engineer at Conexant (formerly
Rockwell Semiconductor Systems),
Newport Beach, California, where
he was responsible for the modeling
and characterization of MOS transistors for RF applications. His technical interests and expertise are in
the field of ultralow-power analog
a n d R F IC desig n , wireless sensor networks, and semiconductor
device modeling. Together with E.
Vittoz and F. Krummenacher, he is
the developer of the EKV MOS transistor model. He is the author and
coauthor of more than 250 scientific papers and has contributed to

numerous conference presentations
and advanced engineering courses.
He is a member of the Swiss Academy of Engineering Sciences. He
was a member of the IEEE Solid-State
Circuits Society (SSCS) Administrative Committee from 2012 to 2014.
He is also the chair of the IEEE SSCS
Chapter of Switzerland.
Francesco Chicco received his
B.Sc. degree in physical engineering from the Polytechnic University
of Turin, Italy, in 2013 and his M.Sc.
degree in micro and nanotechnologies for integrated systems from the
Polytechnic University of Turin, Italy,
the Grenoble Institute of Technology,
France, and the Swiss Federal Institute of Technology (EPFL), Lausanne,
Switzerland, in 2015. Since 2015, he
has been working toward a Ph.D.
degree as a member of the IC Lab
at EPFL. The focus of his work is on
the analysis and design of low-power
analog and RF integrated circuits for
wireless communications.
Alessandro Pezzotta received
his M.Sc. and Ph.D. degrees in solidstate physics from the University of
Milano-Bicocca, Italy, in 2012 and
2015, respectively. During his Ph.D.
study, he developed a mixed-signal
CMOS front-end ASIC devoted to the gaselectron multiplier detector readout,
employed in neutron beam monitoring applications. He also participated
in R&D activities regarding CMOS
continuous-time analog filters and
sensor analog front ends. In 2016, he
joined the IC Lab at the Swiss Federal
Institute of Technology as a scientist, where he works on semiconductor device modeling, especially in
design methodologies based on the
inversion coefficient in terms of dc
characteristics, linearity, noise, and
RF performance, while also targeting
radiation-tolerant applications. He
has published more than 20 scientific papers.

IEEE SOLID-STATE CIRCUITS MAGAZINE

FA L L 2 0 17

81
http://www.B.Sc http://www.M.Sc http://www.M.Sc
Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Fall 2017
