IEEE Solid-State Circuits Magazine - Spring 2014 - 45

itself problematic (a device blowing
up causes simulations to blow up
too!), so, in general, compact device
models account for soft breakdown
effects like impact ionization but
not for hard breakdown. The SOA
for a device is in part defined by
the current metal density limits and
allowable static operating regions
of the I D (VDS, VGS) space but also
depends on the time-dependent
switching behavior. The latter cannot be codified in a compact model.
The breakdown as a function of
layout geometry and the handling
of SOA analysis are therefore also
best handled through the PDK and
dedicated CAD tools in the overall
design flow.

Conclusions
LDMOS transistors are widely used in
high-power and/or voltage applications but exhibit complex behaviors
that are difficult to model; usually
they are the least accurately modeled
devices in BCD technologies. This article reviewed key differences between
the behavior of LDMOS and conventional low-voltage MOS transistors
and has shown how they are modeled
in SP-HV. Some high-voltage transistors do not have out-diffused bodies
like LDMOS devices and may have
symmetric source and drain structure,
but they can exhibit similar electrical
characteristics and therefore are also
more accurately modeled with SP-HV
than with a conventional low-voltage
MOS transistor model.

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