IEEE Solid-State Circuits Magazine - Spring 2016 - 19
Tube Time
Williams tube memory was also developed during this period. The Williams
tube was a modified cathode-ray tube
and relied on the effect of the electron
beam for creating a charge well on the
face of the tube. A read plate was positioned on the face of the tube to sense
the presence or absence of the charge
well. The persistence of this charge
well was finite, on the order of a fraction of a second. Therefore, Williams
tube memory required refresh.
Memory reads were also destructive, requiring data to be written
back after reading. One significant
advantage of the Williams tube over
delay-line and rotating memories was
the ability of the electron beam to be
steered rapidly to any point on the
surface of the tube, thus providing
true random access. In spite of this
advantage, Williams tubes were temperamental, requiring careful adjustment and tweaking of the read plate
over their lifetimes. In part, this was
due to the read plate being external to
the tube. Storage capacity was eventually scaled to 1,000-2,000 b.
In 1946, at the request of John von
Neumann of Princeton's Institute for
From the earliest days of electronic computing,
computer architecture and memory architecture
have been inextricably linked.
Figure 4: ERA magnetic drum memories; pictured is Donald Weidenbach. (Photo courtesy
of the Charles Babbage Institute, University of Minnesota.)
Figure 5: An ERA machinist making a magnetic drum. (Photo courtesy of the Charles Babbage Institute, University of Minnesota.)
Figure 6: The EDSAC computer's mercury
delay lines; pictured is M.V. Wilkes. (Photo
courtesy of the Computer Lab at Cambridge
University.)
IEEE SOLID-STATE CIRCUITS MAGAZINE
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Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Spring 2016
IEEE Solid-State Circuits Magazine - Spring 2016 - Cover1
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