Shimeng Yu and Pai-Yu Chen Emerging Memory Technologies Recent Trends and Prospects T his tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the onetransistor-one-resistor (1T1R) array and the cross-point Digital Object Identifier 10.1109/MSSC.2016.2546199 Date of publication: 21 June 2016 1943-0582/16©2016IEEE array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit- to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop IEEE SOLID-STATE CIRCUITS MAGAZINE S P R I N G 2 0 16 43