IEEE Solid-State Circuits Magazine - Summer 2014 - 65

con ference reports

CSICS 2014: Where III-V Devices Meet Silicon

CSICS will be
held 19-22 October
at the Hyatt
Regency La Jolla
at Aventine,
located in San Diego,
California.

Photos Provided courtesy of hyatt regency La JoLLa at aventine hoteL

T

The 2014 IEEE Compound Semiconductor IC Symposium (CSICS) will be
held 19-22 October at the Hyatt Regency La Jolla at Aventine, located in
San Diego, California. It is a comprehensive, three-day, dual-track technical conference and exhibition with
coverage of compound semiconductor and nanoscale CMOS technologies
and their application to high-speed
analog mixed-signal, optoelectronic,
microwave/millimeter-wave, and
terahertz (THz) circuit design. The
technical program is made up of
60-70 high-quality papers, four topical panel sessions, two short courses,
two tutorials, and a two-day technology exhibition.
CSICS 2014 offers a rich program covering advances in nanoscale
CMOS SoCs, heterogeneous integration of III-V devices with silicon, and
the latest developments in SiGe and

and high-frequency operation with
contributions on millimeter-wave and
THz circuits from the W band up to
the H band in both SiGe and InP technologies. In terms of emerging technologies, CSICS is proud to present a

number of very distinguished speakers
who will discuss the latest innovations
in FDSOI-CMOS, graphene FETs, tunnel
FETs, and two-dimensional materials,
in addition to wide-band-gap and highfrequency devices and modeling. The

Plenary SeSSion: Monday, 20 october.

A.1:

"Evolution of Multigigabit Wireline Transceivers in CMOS"
I. Fujimori, Broadcom Corporation, Irvine, California, USA

III-V circuits. Another major feature
this year is optoelectronic integration with coverage of III-V on-silicon
lasers, silicon Mach-Zenders, advanced
coherent optical systems, and optical
phase-locked loops. CSICS continues
to push the boundaries of high-speed

A.2:

J. Hartmann, STMicroelectronics, Crolles, France
A.3:

Date of publication: 26 August 2014

"Materials and Integration Strategies for Modern RF Integrated Circuits"
D. Green, DARPA/MTO, Arlington, Virginia, USA

A.4:

"Future of GaN RF Technology in Europe"
H. Blanck, United Monolithic Semiconductors, Ulm, Germany

A.5:
Digital Object Identifier 10.1109/MSSC.2014.2327876

"FDSOI Power Efficiency, Reliability, and Flexibility as They Apply to ULV and
Analog Mixed-Signal Design"

"GaN for Next Generation Electronics"
P. Saunier, TriQuint, Richardson, Texas, USA

IEEE SOLID-STATE CIRCUITS MAGAZINE

su m m e r 2 0 14

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Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Summer 2014

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