IEEE Solid-State Circuits Magazine - Winter 2014 - 26
Vcc
Q3
Q42
Q1
Q41
RA
ij
Q2
CS
Q24
RD
Q25
35 Ω
V02
Vref3
Vref1
Q8
RFI
Vx
I3
I4
35 Ω
RC
C2
V01
M84
A
To Control RA, RC, RD.
IB
C67
30 pF
25 pA
Figure 5: AGC TIA architecture (reprinted with permission of the IEEE, authors R.G. Meyer and W.D. Mack ref. 13)
We had a voltage gain of 100,000
With the advent of a 13 GHz BiChave 10% absolute accuracy. After
total with 200MHz -3dB bandwidth
MOS processes a huge opportunity
a multi-week foray into elimina(20 THz GB!) and Bob Meyer calcuopened up to design circuits with
tion and subsequent modeling of
lated it only took 1fF of input-output
highly co-mingled bipolar and CMOS
unwanted substrate coupling at 100
capacitance to cause the problem.
transistors. To extend the TIA conMHz the design was finalized and
Bob Blauschild tracked this down
cept to new markets AGC was applied
sold as the NE/SA5223. Family folto differential parasitic capacitive
in a complex design that varied the
low-on products ensued. The design
coupling from the post amp ECL
feedback resistor (implemented as
is described in detail [11], [13]. Refer
outputs to the preamp input. Lesseveral parallel FETs) depending on
to Figure 5.
sons were learned on differential
the incoming signal-power. MeasurSome customers would mount
designs, shielding, how ground
ing the power required an on-chip
the TIAs into modules and did not
planes affected asymmetries lead30 pF capacitor and a vanishingly
have room for a VCC bypass capaciing to modeling advances at the
small current source of 25 pA. Bob
tor! Bob jumped on this challenge and
package and PCB levels. Besides the
designed simple divider circuits and
invented an active bypass that allowed
application challenges the Test Engithe on-chip 25 pA current source
a couple of meters of cable to be used
neer had to put fat needles down on
was realized and later measured to
without stability issues. A patent (U.S.
the part or insert it in a socket
5,049,764) describes the 1/gm
and try to determine function(set to about 10 Ohms) behav16H
VHHD
ality and specs. Bob worked
ior of the bypass out to almost
on this issue with myself
the FT of the NPN device. See
36
IS
and energetic Test engineers;
Figure 6. [8]
C
28
S
QBP
and we learned of the fragilA recurring theme with
40
NI
Circuitry
ity of microwave probe cards
analog and high-frequency
VC
IO
Elements
VOD
VID
in IC volume production and
circuits is how to ESD protect
D
along the way developed
them without compromising
VLLD
16L
models of the probes, sockperformance. With fragile GHz
ets and ATE boards to enable
bipolar and sensitive MOSFET
Figure 6. Active Bypass (U.S. patent 5,049,764)
commercialization.
gate-oxides on chip the previous
26
w I n t E r 2 0 14
IEEE SOLID-STATE CIRCUITS MAGAZINE
Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Winter 2014
IEEE Solid-State Circuits Magazine - Winter 2014 - Cover1
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IEEE Solid-State Circuits Magazine - Winter 2014 - 1
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IEEE Solid-State Circuits Magazine - Winter 2014 - Cover3
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