IEEE Solid-State Circuits Magazine - Winter 2014 - 52

Chip Complexity
4.3 Billion!!!

100

1,0009
1008
107

Ge

nd
Tre

60
40
20

IMMD and TD
(Novel Circuits and Systems)
A breakthrough concept in biomedical
electronics has been the identification
of the need for "anytime and anywhere" human-monitoring systems
using wearable/implantable devices.

w i n t e r 2 0 14

14
20

12
20

10
20

08
20

06
20

04

1.40

1.40

Bit Size (µm2)

1.00

1.20

1.20
1.10

0.999

1.00

1.00

1.00

0.95

0.90

0.60

1.00

0.85

0.80

0.40

0.346
0.242
0.171

0.20

65

0.80
0.60

0.525

90

1.20

0.85

0.80

0.00

VCC_UP
VCC_HP
Cell Area

45

Vmin(V)

1.20

0.40
0.20
0.127 0.092
0.081 0.073 0.064

40
32
28
22
Technology Node (nm)

20

16

14

0.00

Figure 8: srAM bit-cell and minimum-supply-voltage scaling.

HBM

100
Data Bandwidth (GB/s)

Wireline-focused circuits have been
instrumental in enabling the incredible scaling of computer systems,
ranging from handheld electronics to supercomputers. This year,
at ISSCC 2014, notable accomplishments include:
■ the lowest-reported power longrange 28-Gb/s transceiver, achieving 20 pJ/b and two DFE receivers
operating at 0.25 pJ/b
■ a new coded signaling scheme that
transmits 8 b over eight wires,
enabling 96 Gb/s at 4.3 pJ/b/wire
over 15-dB loss channels
■ an electrical-interconnected 28-Gb/s
transceiver operating over a 30-dB
loss channel
■ a 60-Gb/s transmitter, the highest
transmit data-rate reported to date
■ an optical interconnect that uses
a two-dimensional (12 × 5) optical
array achieving an aggregate datarate of 600 Gb/s.

02

Figure 7: the on-die cache size.

region. While there are several other
exemplary accomplishments in RF circuits, it is noteworthy that the output
power level at sub-mm wave radio frequencies has reached record levels as
illustrated by the 130-nm SiGe source
shown in Figure 11.

Wireline

20

20

Figure 6: the transistor count.

20

00

14

12

20

10

20

08

20

06

20

04

20

02

20

00

20

98

20

96

19

94

19

92

0

19

19

l
ra

ne

80

16

52

Total on-Die Change

120

Cache Size (MB)

Tansistor Count (Millions)

10,00010

R(x)
x)
WIO(

GDD

10

(x)
DDR
R(x)
LPDD

1

0.1
1997 1999 2001 2003 2005 2007 2009 2011 2013 2015
Year

DDR
DDR2
DDR3
DDR4
GDDR3
GDDR4
GDDR5
LPDDR2
LPDDR3
LPDDR4
HBM
WIO

Figure 9: drAM bandwidth.

Such devices will enable improved
of quality of life through self-health
checks, remote examination by

IEEE SOLID-STATE CIRCUITS MAGAZINE

physicians, and continuous monitoring for acute diseases. Key technologies for such system include:



Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Winter 2014

IEEE Solid-State Circuits Magazine - Winter 2014 - Cover1
IEEE Solid-State Circuits Magazine - Winter 2014 - Cover2
IEEE Solid-State Circuits Magazine - Winter 2014 - 1
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IEEE Solid-State Circuits Magazine - Winter 2014 - Cover3
IEEE Solid-State Circuits Magazine - Winter 2014 - Cover4
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https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2022
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2021
https://www.nxtbook.com/nxtbooks/ieee/mssc_fall2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_summer2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_spring2020
https://www.nxtbook.com/nxtbooks/ieee/mssc_winter2020
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https://www.nxtbook.com/nxtbooks/ieee/mssc_2019summer
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