IEEE Solid-State Circuits Magazine - Winter 2015 - 28

The third session of day two featured
ten papers by students from different
colleges. Dr. Nisha Kuruvilla, HOD, College of Engineering, Chengannur chaired
the session.
As an external participant said, "The
lectures were the most effective, and
the interactive session was so fruitful."
-Jisha M. Nair
Secretary SSCS Student
Branch Saintgits

the faculty of electronics and communication interacting with Dr. anil Kottantharayil.

Prof. Willy Sansen, Past President of IEEE SSCS,
Lectures at the University of São Paulo, Brazil

O

On 15 August 2014, IEEE Solid-State
Circuits Society (SSCS) Past President Willy Sansen visited SSCS-South
Brazil. The invited talk at the Polytechnic School of Engineering of the
University of São Paulo, Brazil (USP),
attracted more than 60 participants,
including professors, undergraduates, master's and Ph.D. students,
and people from research centers
and industries.
Dr. Sansen, professor emeritus
at the Catholic University of Leuven (KUL), Belgium, spoke on analog
design challenges in nanometer CMOS
technologies, in particular, many
"more than Moore" applications, such
as sensor interfaces and biomedical
and automotive applications, that use
nanometer CMOS technologies.
Explaining how such applications
affect speed, noise, and mismatch,
Prof. Sansen demonstrated how the
supply voltage is reduced to values
below 1 V and described how this
behavior creates new challenges for
both analog and mixed-signal circuit design. Another important area
that he highlighted in the design of
advanced analog circuits are MOST
models, from which important
parameters for main blocks can be
obtained, such as ratio gm/IDS, fT and
their product, as shown in Figure 1.

From left: prof. Wilhelmus Van Noije (Usp), prof. Willy sansen (KUL), and prof. João Martino
(Usp).

gm
IDS

28

W i n t e r 2 0 15

1
nUT √IC

λc

fT

fT

-1
IC

fTsp √IC

fTsp
fTsp

1/2

IC

1

fTsp
λc

gm
IDS

fTspIC
1

nUT

-1
2

1/λ
λc

λc =

2µUT
2πL2

1 2µUT
L vsat
Lsat ≈ 20 nm

vsat
2πL

nUTλ2c IC

fTsp

1

IEEE SOLID-STATE CIRCUITS MAGAZINE

=

fTsp
nUT

Figure 1.

fTsp =

1
nUTλc IC

1/2
/2
2

nUT

Digital Object Identifier 10.1109/MSSC.2014.2369335
Date of publication: 11 February 2015

Ratio gm/IDS, fT and Their Product

1
nUT

IC

For L = 40 nm
fTsp = 200 GHz

2

λc = 0.5 and 1/λc = 4
fTsp/λc = 400 GHz
fTsp/nUT = 6.1 THz/V

Sansen, ICECS 2013, 337-340



Table of Contents for the Digital Edition of IEEE Solid-State Circuits Magazine - Winter 2015

IEEE Solid-State Circuits Magazine - Winter 2015 - Cover1
IEEE Solid-State Circuits Magazine - Winter 2015 - Cover2
IEEE Solid-State Circuits Magazine - Winter 2015 - 1
IEEE Solid-State Circuits Magazine - Winter 2015 - 2
IEEE Solid-State Circuits Magazine - Winter 2015 - 3
IEEE Solid-State Circuits Magazine - Winter 2015 - 4
IEEE Solid-State Circuits Magazine - Winter 2015 - 5
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IEEE Solid-State Circuits Magazine - Winter 2015 - 9
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IEEE Solid-State Circuits Magazine - Winter 2015 - 48
IEEE Solid-State Circuits Magazine - Winter 2015 - Cover3
IEEE Solid-State Circuits Magazine - Winter 2015 - Cover4
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