Magnetics Business & Technology - Summer 2018 - 4

EDITOR'S CHOICE
World's First GaN Power ICs Leave Silicon Behind
Navitas Semiconductor today announced the world's first Gallium Nitride (GaN) Power ICs,
using its proprietary AllGaN™ monolithically-integrated 650V platform. Combining GaN power
FETs with GaN logic and drive circuits enables 10x-100x higher switching frequency than
existing silicon circuits, making power electronics smaller, lighter and lower cost. A new generation of high frequency, energy efficient converters is being enabled for smartphone and
laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and
datacenters.
"GaN has tremendous potential to displace silicon in the power electronics market given its
inherent high-speed, high-efficiency capabilities as a power FET", says Dan Kinzer, Navitas CTO & COO. "Previously, that potential
was limited by the lack of equally high performance circuits to drive the GaN FETs quickly
and cost effectively. Navitas has solved this
remaining challenge to unlock the full potential of the power GaN market. With monolithic
integration of GaN drive and logic circuits with
GaN power FETs, the industry now has a path
to cost-effective, easy-to-use, high-frequency
power system designs."
CEO Gene Sheridan added "The last time power electronics experienced a dramatic improvement in density, efficiency and cost was in the late 70s when silicon MOSFETs replaced
bipolar transistors, enabling a transition from linear regulators to switching regulators. A 10x
improvement in density, 3x reduction in power losses and 3x lower cost resulted a short time
thereafter. A similar market disruption is about to occur in which GaN power ICs will enable
low-frequency, silicon-based power systems to be replaced by high-frequency GaN with dramatic improvements in density, efficiency and cost. This is an exciting time for the industry."

Mitsubishi Electric Develops
Unique Technology for Electromagne c-field and Large-coupled
Analysis of Turbine Generators
Mitsubishi Electric Corporation has
announced the development of what it
believes is the world's-first technology
for determining the operational status
Mitsubishi Electric will use the new technology for
of power generators using electroits VP-X Series turbine generators
magnetic-field analysis of up to an
unprecedented 30 million meshes and
coupled-numerical analysis. The new technology will help improve generator performance
by reducing loss, raising cooling efficiency and reducing vibration, etc. for strengthened reliability, ultimately to enhance the stability of electricity supply. Mitsubishi Electric will use the
new technology for its current VP-X Series turbine generators and future models. The company also aims to combine the above technologies in a comprehensive system that provides
full analysis of generators by around 2020.

Volume 17, Issue 2
Editor & Publisher
David Webster

Contributing Editor
Stan Trout

Director of Support Services
Ross Webster

Director of Sales and Content
Scott Webster

Design & Layout
Scott Webster

Administration
Marsha Grillo, Director

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Mitsubishi Electric developed its large-scale electromagnetic field analysis technology by
using an original modeling method for domain decomposition. Electromagnetic loss distribution in a stator coil's 100-some copper strands is evaluated with high accuracy. Compared
to conventional part-by-part small-scale analysis, the new technology accurately evaluates
electromagnetic-loss distribution by analyzing the stator end-region structures, which significantly affect generation efficiency, as a whole.

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