Yumeng Yang, Spin InfoTech Lab, ShanghaiTech University Faster and more reliable We congratulate the Spin InfoTech Lab led by Prof. Yumeng Yang at ShanghaiTech University for realizing fast and energy-efficient magnetization switching. Through charge-spin conversion based on the anomalous Hall effect in ferromagnetic materials, this result can be used in a magnetic random access memory (MRAM) bit to improve reliability, memory density, and speed. This work will greatly benefit the commercialization of next-generation MRAM technology, which is one of the most promising candidates for high-performance neuromorphic computing. We are excited to continue our collaboration and look forward to further spectacular results. Zurich Instruments Free Info at http://info.hotims.com/79416-733 Cov ToChttp://info.hotims.com/79416-733 http://www.abpi.net/ntbpdfclicks/l.php?202108MDNAV